component
XR4407A
Public Made by Adomby adom
XNRUSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownXR4407A
XNRUSEMI · MOSFETs · SOP-8
XR4407A from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3; VDS rated -30 V and continuous drain current -12 A at TA=25℃. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3; VDS rated -30 V and continuous drain current -12 A at TA=25℃. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2; VDS rated -30 V and continuous drain current -12 A at TA=25℃. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage limit ±20 V, threshold VGS(th) -1.0 to -2.5 V at ID=-250μA. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; drain-source voltage -30 V max, pulsed drain current -46 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; drain-source voltage -30 V max, pulsed drain current -46 A. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; drain-source voltage -30 V max, pulsed drain current -46 A. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; drain-source voltage -30 V max, pulsed drain current -46 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID= -250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS= -30V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 9.5 | 14 | mΩ | VGS= -10V, ID= -10A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 17 | 24 | mΩ | VGS= -4.5V, ID= -5A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -12 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -60 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS= -15A | 2 | |
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | -12 | A | VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -9 | A | VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -46 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 55 | mJ | 1 | |||
| Avalanche Current | IAS | -50 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 4.5 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 75 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient | RθJA | 40 | ℃/W | t≦10s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 24 | ℃/W | 1 | |||
| Input Capacitance | Ciss | 1770 | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 233 | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 206 | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 22 | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 | ||
| Gate-Source Charge | Qgs | 1 | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 | ||
| Gate-Drain Charge | Qgd | 1.8 | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 | ||
| Turn-on Delay Time | td(on) | 9 | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 2 | ||
| Turn-on Rise Time | tr | 13 | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 2 | ||
| Turn-off Delay Time | td(off) | 48 | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 2 | ||
| Turn-off Fall Time | tf | 20 | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 2 | ||
| Reverse Recovery Time | trr | 64 | ns | TJ=25℃, VDD= -24V, IF=-2.8A, dI/dt=-100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 25 | nC | TJ=25℃, VDD= -24V, IF=-2.8A, dI/dt=-100A/μs | 2 |
CAD (KiCad official)
- Symbol:
XR4407A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
xr4407a-etched.step/xr4407a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xr4407a.step/xr4407a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XNRUSEMI datasheet (6 pp, sha256
568a4613e912d12e, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).