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XP151A13A0MR-JSM
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JSMSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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XP151A13A0MR-JSM
JSMSEMI · MOSFETs · SOT-23
XP151A13A0MR-JSM from JSMSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; maximum gate-source voltage is ±12 V with a threshold of 0.5 to 1.0 V. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET; continuous source-drain diode current is 1.0 A. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is 20 V max and continuous drain current is 0.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =-250µA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 0.5 | 0.8 | 1 | V | VDS =VGS, ID =-250µA | 2 |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS =0V, VGS =±12V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =16V, VGS =0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.085 | 0.1 | Ω | VGS =4.5V, ID =0.5A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.135 | 0.15 | Ω | VGS =2.5V, ID =0.5A | 2 | |
| Body diode voltage | VSD | 0.7 | 1.3 | V | IS=1.0A | 2 | |
| Continuous source-drain diode current | IS | 1 | A | TC=25℃ | 2 | ||
| Forward transconductance | gfs | 8 | S | VDS =5V, ID =0.5A | 2 | ||
| Input capacitance | Ciss | 300 | pF | VDS =10V,VGS =0V,f =1MHz | 2 | ||
| Output capacitance | Coss | 120 | pF | VDS =10V,VGS =0V,f =1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 80 | pF | VDS =10V,VGS =0V,f =1MHz | 2 | ||
| Total gate charge | Qg | 4 | nC | VDS =10V,VGS =4.5V,ID =0.5A | 2 | ||
| Turn-on delay time | td(on) | 15 | ns | VDD=10V,ID =0.5A,VGEN=4.5V,Rg=6Ω | 2 | ||
| Rise time | tr | 85 | ns | VDD=10V,ID =0.5A,VGEN=4.5V,Rg=6Ω | 2 | ||
| Turn-off delay time | td(off) | 45 | ns | VDD=10V,ID =0.5A,VGEN=4.5V,Rg=6Ω | 2 | ||
| Fall time | tf | 20 | ns | VDD=10V,ID =0.5A,VGEN=4.5V,Rg=6Ω | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | Ta=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | Ta=25℃ | 1 | |
| Continuous Drain Current | ID | 0.5 | A | Ta=25℃ | 1 | ||
| Pulsed Drain Current | IDM | 4 | A | Pulse Width ≤ 300μs, Duty cycle ≤2% | 1 | ||
| Continuous Source-Drain Diode Current | IS | 1 | A | Ta=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 0.5 | W | Ta=25℃ | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 250 | ℃/W | t ≤5s | 1 |
CAD (KiCad official)
- Symbol:
XP151A13A0MR-JSM - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
xp151a13a0mr-jsm-etched.step/xp151a13a0mr-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xp151a13a0mr-jsm.step/xp151a13a0mr-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (6 pp, sha256
845a2eef2da2d7ba, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# XP151A13A0MR-JSM
**JSMSEMI** · MOSFETs · SOT-23
XP151A13A0MR-JSM from JSMSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; maximum gate-source voltage is ±12 V with a threshold of 0.5 to 1.0 V. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET; continuous source-drain diode current is 1.0 A. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is 20 V max and continuous drain current is 0.5 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | | | V | VGS = 0V, ID =-250µA | 2 |
| Gate-source threshold voltage | VGS(th) | 0.5 | 0.8 | 1 | V | VDS =VGS, ID =-250µA | 2 |
| Gate-source leakage | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±12V | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS =16V, VGS =0V | 2 |
| Drain-source on-state resistance | RDS(on) | | 0.085 | 0.1 | Ω | VGS =4.5V, ID =0.5A | 2 |
| Drain-source on-state resistance | RDS(on) | | 0.135 | 0.15 | Ω | VGS =2.5V, ID =0.5A | 2 |
| Body diode voltage | VSD | | 0.7 | 1.3 | V | IS=1.0A | 2 |
| Continuous source-drain diode current | IS | | | 1 | A | TC=25℃ | 2 |
| Forward transconductance | gfs | | 8 | | S | VDS =5V, ID =0.5A | 2 |
| Input capacitance | Ciss | | 300 | | pF | VDS =10V,VGS =0V,f =1MHz | 2 |
| Output capacitance | Coss | | 120 | | pF | VDS =10V,VGS =0V,f =1MHz | 2 |
| Reverse transfer capacitance | Crss | | 80 | | pF | VDS =10V,VGS =0V,f =1MHz | 2 |
| Total gate charge | Qg | | 4 | | nC | VDS =10V,VGS =4.5V,ID =0.5A | 2 |
| Turn-on delay time | td(on) | | 15 | | ns | VDD=10V,ID =0.5A,VGEN=4.5V,Rg=6Ω | 2 |
| Rise time | tr | | 85 | | ns | VDD=10V,ID =0.5A,VGEN=4.5V,Rg=6Ω | 2 |
| Turn-off delay time | td(off) | | 45 | | ns | VDD=10V,ID =0.5A,VGEN=4.5V,Rg=6Ω | 2 |
| Fall time | tf | | 20 | | ns | VDD=10V,ID =0.5A,VGEN=4.5V,Rg=6Ω | 2 |
| Drain-Source Voltage | VDS | | | 20 | V | Ta=25℃ | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | Ta=25℃ | 1 |
| Continuous Drain Current | ID | | | 0.5 | A | Ta=25℃ | 1 |
| Pulsed Drain Current | IDM | | | 4 | A | Pulse Width ≤ 300μs, Duty cycle ≤2% | 1 |
| Continuous Source-Drain Diode Current | IS | | | 1 | A | Ta=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 0.5 | W | Ta=25℃ | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 250 | ℃/W | t ≤5s | 1 |
## CAD (KiCad official)
- Symbol: `XP151A13A0MR-JSM`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `xp151a13a0mr-jsm-etched.step` / `xp151a13a0mr-jsm-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `xp151a13a0mr-jsm.step` / `xp151a13a0mr-jsm.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [JSMSEMI datasheet](docs/xp151a13a0mr-jsm-datasheet.pdf) (6 pp, sha256 `845a2eef2da2d7ba`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/xp151a13a0mr-jsm-datasheet.pdf)