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XP151A13A0MR-JSM

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JSMSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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XP151A13A0MR-JSM

JSMSEMI · MOSFETs · SOT-23

XP151A13A0MR-JSM from JSMSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET; maximum gate-source voltage is ±12 V with a threshold of 0.5 to 1.0 V.
2 SOURCE passive Source terminal of the N-channel MOSFET; continuous source-drain diode current is 1.0 A.
3 DRAIN passive Drain terminal of the N-channel MOSFET; drain-source voltage is 20 V max and continuous drain current is 0.5 A.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID =-250µA 2
Gate-source threshold voltage VGS(th) 0.5 0.8 1 V VDS =VGS, ID =-250µA 2
Gate-source leakage IGSS -100 100 nA VDS =0V, VGS =±12V 2
Zero gate voltage drain current IDSS 1 µA VDS =16V, VGS =0V 2
Drain-source on-state resistance RDS(on) 0.085 0.1 Ω VGS =4.5V, ID =0.5A 2
Drain-source on-state resistance RDS(on) 0.135 0.15 Ω VGS =2.5V, ID =0.5A 2
Body diode voltage VSD 0.7 1.3 V IS=1.0A 2
Continuous source-drain diode current IS 1 A TC=25℃ 2
Forward transconductance gfs 8 S VDS =5V, ID =0.5A 2
Input capacitance Ciss 300 pF VDS =10V,VGS =0V,f =1MHz 2
Output capacitance Coss 120 pF VDS =10V,VGS =0V,f =1MHz 2
Reverse transfer capacitance Crss 80 pF VDS =10V,VGS =0V,f =1MHz 2
Total gate charge Qg 4 nC VDS =10V,VGS =4.5V,ID =0.5A 2
Turn-on delay time td(on) 15 ns VDD=10V,ID =0.5A,VGEN=4.5V,Rg=6Ω 2
Rise time tr 85 ns VDD=10V,ID =0.5A,VGEN=4.5V,Rg=6Ω 2
Turn-off delay time td(off) 45 ns VDD=10V,ID =0.5A,VGEN=4.5V,Rg=6Ω 2
Fall time tf 20 ns VDD=10V,ID =0.5A,VGEN=4.5V,Rg=6Ω 2
Drain-Source Voltage VDS 20 V Ta=25℃ 1
Gate-Source Voltage VGS -12 12 V Ta=25℃ 1
Continuous Drain Current ID 0.5 A Ta=25℃ 1
Pulsed Drain Current IDM 4 A Pulse Width ≤ 300μs, Duty cycle ≤2% 1
Continuous Source-Drain Diode Current IS 1 A Ta=25℃ 1
Maximum Power Dissipation PD 0.5 W Ta=25℃ 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 250 ℃/W t ≤5s 1

CAD (KiCad official)

  • Symbol: XP151A13A0MR-JSM
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: xp151a13a0mr-jsm-etched.step / xp151a13a0mr-jsm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xp151a13a0mr-jsm.step / xp151a13a0mr-jsm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (6 pp, sha256 845a2eef2da2d7ba, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF