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X1G0041710015

Public Made by Adom

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Seiko Epson Crystal Oscillators, SMD2520-4P. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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X1G0041710015

Seiko Epson · Crystal Oscillators · SMD2520-4P

X1G0041710015 from Seiko Epson, in a SMD2520-4P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ST input Active-low standby pin: HIGH or open enables oscillation at the specified frequency, LOW stops oscillation and puts OUT in high impedance; VIH is 80 % VCC min and VIL is 20 % VCC max.
2 GND power_in Ground reference; a 0.01 µF to 0.1 µF bypass capacitor should be placed as close as possible between VCC and GND.
3 OUT output CMOS clock output with 45 % to 55 % symmetry at 50 % VCC for a load of 15 pF max, with rise and fall times of 3 ns max.
4 VCC power_in Power supply, 1.8 V to 3.3 V typ. for SG-210STF, with a 0.01 µF to 0.1 µF bypass capacitor placed as close as possible to this terminal.

Key specifications

Parameter Value
Manufacturer Seiko Epson
Package SMD2520-4P
Category Crystals, Oscillators, Resonators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage (fo ≤ 50 MHz, T_use = +105 °C) VCC 1.6 3.63 V 4 MHz ≤ fo ≤ 50 MHz, T_use = +105 °C Max. 1
Supply voltage (fo = 72 MHz, T_use = +85 °C) VCC 1.71 3.63 V fo = 72 MHz, T_use = +85 °C Max. 1
Supply voltage (fo = 72 MHz, T_use = +105 °C) VCC 2.25 3.63 V fo = 72 MHz, T_use = +105 °C Max. 1
Storage temperature T_stg -40 125 °C All others (not SG2016CAN, SG3225CAN) 1
Operating temperature T_use -40 105 °C Feature list for SG-210STF: Operating temperature -40 °C to +105 °C 1
Frequency tolerance (-20 °C to +70 °C) f_tol -25 25 × 10-6 -20 °C to +70 °C 1
Frequency tolerance (-40 °C to +85 °C, -40 °C to +105 °C) f_tol -50 50 × 10-6 -40 °C to +85 °C, -40 °C to +105 °C 1
Current consumption (VCC 1.8 V, 4-20 MHz) ICC 1.5 mA VCC = 1.8 V ± 10 %; No load condition, 4 MHz ≤ fo ≤ 20 MHz 1
Current consumption (VCC 1.8 V, 20-40 MHz) ICC 1.8 mA VCC = 1.8 V ± 10 %; No load condition, 20 MHz < fo ≤ 40 MHz 1
Current consumption (VCC 1.8 V, 40-50 MHz) ICC 2.1 mA VCC = 1.8 V ± 10 %; No load condition, 40 MHz < fo ≤ 50 MHz 1
Current consumption (VCC 1.8 V, 72 MHz) ICC 2.4 mA VCC = 1.8 V ± 10 %; No load condition, fo = 72 MHz 1
Current consumption (VCC 2.5 V, 4-20 MHz) ICC 1.6 mA VCC = 2.5 V ± 10 %; No load condition, 4 MHz ≤ fo ≤ 20 MHz 1
Current consumption (VCC 2.5 V, 20-40 MHz) ICC 2 mA VCC = 2.5 V ± 10 %; No load condition, 20 MHz < fo ≤ 40 MHz 1
Current consumption (VCC 2.5 V, 40-50 MHz) ICC 2.4 mA VCC = 2.5 V ± 10 %; No load condition, 40 MHz < fo ≤ 50 MHz 1
Current consumption (VCC 2.5 V, 72 MHz) ICC 2.8 mA VCC = 2.5 V ± 10 %; No load condition, fo = 72 MHz 1
Current consumption (VCC 3.3 V, 4-20 MHz) ICC 1.8 mA VCC = 3.3 V ± 10 %; No load condition, 4 MHz ≤ fo ≤ 20 MHz 1
Current consumption (VCC 3.3 V, 20-40 MHz) ICC 2.2 mA VCC = 3.3 V ± 10 %; No load condition, 20 MHz < fo ≤ 40 MHz 1
Current consumption (VCC 3.3 V, 40-50 MHz) ICC 2.6 mA VCC = 3.3 V ± 10 %; No load condition, 40 MHz < fo ≤ 50 MHz 1
Current consumption (VCC 3.3 V, 72 MHz) ICC 3 mA VCC = 3.3 V ± 10 %; No load condition, fo = 72 MHz 1
Stand-by current (VCC 1.8 V) I_std 2.1 µA VCC = 1.8 V ± 10 %; ST = GND 1
Stand-by current (VCC 2.5 V) I_std 2.5 µA VCC = 2.5 V ± 10 %; ST = GND 1
Stand-by current (VCC 3.3 V) I_std 2.7 µA VCC = 3.3 V ± 10 %; ST = GND 1
Symmetry SYM 45 55 % 50 % VCC level, L_CMOS ≤ 15 pF 1
Output voltage high (CMOS) VOH 90 % VCC IOH -1.5 mA (1.8 V ± 10 %), -3 mA (2.5 V ± 10 %), -4 mA (3.3 V ± 10 %) 1
Output voltage low (CMOS) VOL 10 % VCC IOL 1.5 mA (1.8 V ± 10 %), 3 mA (2.5 V ± 10 %), 4 mA (3.3 V ± 10 %) 1
Output voltage low (VOL-2) VOL-2 0.4 V IOL 3 mA (1.8 V ± 10 %), 4 mA (2.5 V ± 10 %), 6 mA (3.3 V ± 10 %) 1
Output load capacitance (CMOS) L_CMOS 15 pF Output load condition (CMOS) 1
Input voltage high (ST terminal) VIH 80 % VCC ST terminal 1
Input voltage low (ST terminal) VIL 20 % VCC ST terminal 1
Rise and fall time tr / tf 3 ns 1
Rise and fall time (@1.8 V ± 10 %) tr / tf 3.5 ns @1.8 V ± 10 %; 20 % VCC to 80 % VCC level, L_CMOS = 15 pF 1
Start-up time t_str 3 ms T = 0 at 90 % VCC 1
Frequency aging f_age -3 3 × 10-6 / year +25 °C, First year 1

CAD (KiCad official)

  • Symbol: X1G0041710015
  • Footprint: Crystal:Crystal_SMD_2520-4Pin_2.5x2.0mm
  • 3D model: SMD2520-4P (KiCad packages3D, STEP)
  • 3D model files: x1g0041710015-etched.step / x1g0041710015-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); x1g0041710015.step / x1g0041710015.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Seiko Epson datasheet (3 pp, sha256 f8748780dfc943fb, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF