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X1G0041710015

Seiko Epson · Crystal Oscillators · SMD2520-4P

X1G0041710015 from Seiko Epson, in a SMD2520-4P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	ST	input	Active-low standby pin: HIGH or open enables oscillation at the specified frequency, LOW stops oscillation and puts OUT in high impedance; VIH is 80 % VCC min and VIL is 20 % VCC max.
2	GND	power_in	Ground reference; a 0.01 µF to 0.1 µF bypass capacitor should be placed as close as possible between VCC and GND.
3	OUT	output	CMOS clock output with 45 % to 55 % symmetry at 50 % VCC for a load of 15 pF max, with rise and fall times of 3 ns max.
4	VCC	power_in	Power supply, 1.8 V to 3.3 V typ. for SG-210STF, with a 0.01 µF to 0.1 µF bypass capacitor placed as close as possible to this terminal.

Key specifications

Parameter	Value
Manufacturer	Seiko Epson
Package	SMD2520-4P
Category	Crystals, Oscillators, Resonators
Pins	4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Supply voltage (fo ≤ 50 MHz, T_use = +105 °C)	VCC	1.6	3.63	V	4 MHz ≤ fo ≤ 50 MHz, T_use = +105 °C Max.	1
Supply voltage (fo = 72 MHz, T_use = +85 °C)	VCC	1.71	3.63	V	fo = 72 MHz, T_use = +85 °C Max.	1
Supply voltage (fo = 72 MHz, T_use = +105 °C)	VCC	2.25	3.63	V	fo = 72 MHz, T_use = +105 °C Max.	1
Storage temperature	T_stg	-40	125	°C	All others (not SG2016CAN, SG3225CAN)	1
Operating temperature	T_use	-40	105	°C	Feature list for SG-210STF: Operating temperature -40 °C to +105 °C	1
Frequency tolerance (-20 °C to +70 °C)	f_tol	-25	25	× 10-6	-20 °C to +70 °C	1
Frequency tolerance (-40 °C to +85 °C, -40 °C to +105 °C)	f_tol	-50	50	× 10-6	-40 °C to +85 °C, -40 °C to +105 °C	1
Current consumption (VCC 1.8 V, 4-20 MHz)	ICC		1.5	mA	VCC = 1.8 V ± 10 %; No load condition, 4 MHz ≤ fo ≤ 20 MHz	1
Current consumption (VCC 1.8 V, 20-40 MHz)	ICC		1.8	mA	VCC = 1.8 V ± 10 %; No load condition, 20 MHz < fo ≤ 40 MHz	1
Current consumption (VCC 1.8 V, 40-50 MHz)	ICC		2.1	mA	VCC = 1.8 V ± 10 %; No load condition, 40 MHz < fo ≤ 50 MHz	1
Current consumption (VCC 1.8 V, 72 MHz)	ICC		2.4	mA	VCC = 1.8 V ± 10 %; No load condition, fo = 72 MHz	1
Current consumption (VCC 2.5 V, 4-20 MHz)	ICC		1.6	mA	VCC = 2.5 V ± 10 %; No load condition, 4 MHz ≤ fo ≤ 20 MHz	1
Current consumption (VCC 2.5 V, 20-40 MHz)	ICC		2	mA	VCC = 2.5 V ± 10 %; No load condition, 20 MHz < fo ≤ 40 MHz	1
Current consumption (VCC 2.5 V, 40-50 MHz)	ICC		2.4	mA	VCC = 2.5 V ± 10 %; No load condition, 40 MHz < fo ≤ 50 MHz	1
Current consumption (VCC 2.5 V, 72 MHz)	ICC		2.8	mA	VCC = 2.5 V ± 10 %; No load condition, fo = 72 MHz	1
Current consumption (VCC 3.3 V, 4-20 MHz)	ICC		1.8	mA	VCC = 3.3 V ± 10 %; No load condition, 4 MHz ≤ fo ≤ 20 MHz	1
Current consumption (VCC 3.3 V, 20-40 MHz)	ICC		2.2	mA	VCC = 3.3 V ± 10 %; No load condition, 20 MHz < fo ≤ 40 MHz	1
Current consumption (VCC 3.3 V, 40-50 MHz)	ICC		2.6	mA	VCC = 3.3 V ± 10 %; No load condition, 40 MHz < fo ≤ 50 MHz	1
Current consumption (VCC 3.3 V, 72 MHz)	ICC		3	mA	VCC = 3.3 V ± 10 %; No load condition, fo = 72 MHz	1
Stand-by current (VCC 1.8 V)	I_std		2.1	µA	VCC = 1.8 V ± 10 %; ST = GND	1
Stand-by current (VCC 2.5 V)	I_std		2.5	µA	VCC = 2.5 V ± 10 %; ST = GND	1
Stand-by current (VCC 3.3 V)	I_std		2.7	µA	VCC = 3.3 V ± 10 %; ST = GND	1
Symmetry	SYM	45	55	%	50 % VCC level, L_CMOS ≤ 15 pF	1
Output voltage high (CMOS)	VOH	90		% VCC	IOH -1.5 mA (1.8 V ± 10 %), -3 mA (2.5 V ± 10 %), -4 mA (3.3 V ± 10 %)	1
Output voltage low (CMOS)	VOL		10	% VCC	IOL 1.5 mA (1.8 V ± 10 %), 3 mA (2.5 V ± 10 %), 4 mA (3.3 V ± 10 %)	1
Output voltage low (VOL-2)	VOL-2		0.4	V	IOL 3 mA (1.8 V ± 10 %), 4 mA (2.5 V ± 10 %), 6 mA (3.3 V ± 10 %)	1
Output load capacitance (CMOS)	L_CMOS		15	pF	Output load condition (CMOS)	1
Input voltage high (ST terminal)	VIH	80		% VCC	ST terminal	1
Input voltage low (ST terminal)	VIL		20	% VCC	ST terminal	1
Rise and fall time	tr / tf		3	ns		1
Rise and fall time (@1.8 V ± 10 %)	tr / tf		3.5	ns	@1.8 V ± 10 %; 20 % VCC to 80 % VCC level, L_CMOS = 15 pF	1
Start-up time	t_str		3	ms	T = 0 at 90 % VCC	1
Frequency aging	f_age	-3	3	× 10-6 / year	+25 °C, First year	1

CAD (KiCad official)

Symbol: X1G0041710015
Footprint: Crystal:Crystal_SMD_2520-4Pin_2.5x2.0mm
3D model: SMD2520-4P (KiCad packages3D, STEP)
3D model files: x1g0041710015-etched.step / x1g0041710015-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); x1g0041710015.step / x1g0041710015.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Seiko Epson datasheet (3 pp, sha256 f8748780dfc943fb, retrieved 2026-10-16, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF