# WTM47N65FMP

**WPMtek(Wei Pan Microelectronics)** · MOSFETs · TO-247

WTM47N65FMP from WPMtek(Wei Pan Microelectronics), in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with an absolute maximum gate-source voltage of ±30 V and a threshold of 3 V min, 4 V typ, 5 V max at ID=250uA. |
| 2 | D | passive | Drain, which is also connected to the mounting tab; rated for 650 V drain-source voltage and 47 A DC drain current at Tc=25°C (160 A pulsed). |
| 3 | S | passive | Source; the integral body diode carries up to 47 A DC (160 A pulsed) from source to drain. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WPMtek(Wei Pan Microelectronics) |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | 650 | V |  | 1 |
| Gate-source voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Drain current (DC) | ID |  |  | 47 | A | Tc=25°C | 1 |
| Drain current (DC) | ID |  |  | 25 | A | Tc=100°C | 1 |
| Drain current (Pulsed) | IDM |  |  | 160 | A |  | 1 |
| Single pulsed avalanche energy | EAS |  |  | 980 | mJ | Note 2 | 1 |
| Repetitive avalanche current | IAR |  |  | 9 | A |  | 1 |
| Repetitive avalanche energy | EAR |  |  | 2.3 | mJ |  | 1 |
| Power dissipation | PD |  |  | 230 | W |  | 1 |
| Diode dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | Note 3 | 1 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | Note 4 | 1 |
| Junction temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, junction to case | Rth(j-c) |  |  | 0.543 | °C/W |  | 2 |
| Thermal resistance, junction to ambient | Rth(j-a) |  |  | 50 | °C/W |  | 2 |
| Drain-source breakdown voltage | BVDSS | 650 |  |  | V | ID=250uA, VGS=0 | 2 |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | ID=250uA, VDS=VGS | 2 |
| Drain-source cut-off current | IDSS |  |  | 10 | uA | VDS=650V, VGS=0V | 2 |
| Gate leakage current | IGSS |  |  | 1000 | nA | VDS=0V, VGS=±30V | 2 |
| Drain-source on-resistance | RDS(ON) |  | 0.062 | 0.078 | Ω | VGS=10V, ID=15.4A | 2 |
| Source current (DC) | IS |  |  | 47 | A | Integral reverse diode in the MOSFET | 2 |
| Source current (Pulsed) | ISM |  |  | 160 | A |  | 2 |
| Forward voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=47A | 2 |

## CAD (KiCad official)

- Symbol: `WTM47N65FMP`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files: `wtm47n65fmp-etched.step` / `wtm47n65fmp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wtm47n65fmp.step` / `wtm47n65fmp.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WPMtek(Wei Pan Microelectronics) datasheet](docs/wtm47n65fmp-datasheet.pdf) (9 pp, sha256 `6bab0d368ada155f`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wtm47n65fmp-datasheet.pdf)