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Contents

README

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WTM47N65FMP

WPMtek(Wei Pan Microelectronics) · MOSFETs · TO-247

WTM47N65FMP from WPMtek(Wei Pan Microelectronics), in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with an absolute maximum gate-source voltage of ±30 V and a threshold of 3 V min, 4 V typ, 5 V max at ID=250uA.
2 D passive Drain, which is also connected to the mounting tab; rated for 650 V drain-source voltage and 47 A DC drain current at Tc=25°C (160 A pulsed).
3 S passive Source; the integral body diode carries up to 47 A DC (160 A pulsed) from source to drain.

Key specifications

Parameter Value
Manufacturer WPMtek(Wei Pan Microelectronics)
Package TO-247
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 650 V 1
Gate-source voltage VGSS -30 30 V 1
Drain current (DC) ID 47 A Tc=25°C 1
Drain current (DC) ID 25 A Tc=100°C 1
Drain current (Pulsed) IDM 160 A 1
Single pulsed avalanche energy EAS 980 mJ Note 2 1
Repetitive avalanche current IAR 9 A 1
Repetitive avalanche energy EAR 2.3 mJ 1
Power dissipation PD 230 W 1
Diode dv/dt ruggedness dv/dt 50 V/ns Note 3 1
MOSFET dv/dt ruggedness dv/dt 50 V/ns Note 4 1
Junction temperature TJ 150 °C 1
Storage temperature range Tstg -55 150 °C 1
Thermal resistance, junction to case Rth(j-c) 0.543 °C/W 2
Thermal resistance, junction to ambient Rth(j-a) 50 °C/W 2
Drain-source breakdown voltage BVDSS 650 V ID=250uA, VGS=0 2
Gate threshold voltage VGS(th) 3 4 5 V ID=250uA, VDS=VGS 2
Drain-source cut-off current IDSS 10 uA VDS=650V, VGS=0V 2
Gate leakage current IGSS 1000 nA VDS=0V, VGS=±30V 2
Drain-source on-resistance RDS(ON) 0.062 0.078 Ω VGS=10V, ID=15.4A 2
Source current (DC) IS 47 A Integral reverse diode in the MOSFET 2
Source current (Pulsed) ISM 160 A 2
Forward voltage VSD 1.2 V VGS=0V, IS=47A 2

CAD (KiCad official)

  • Symbol: WTM47N65FMP
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: wtm47n65fmp-etched.step / wtm47n65fmp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wtm47n65fmp.step / wtm47n65fmp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WPMtek(Wei Pan Microelectronics) datasheet (9 pp, sha256 6bab0d368ada155f, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF