# WTM30N65AP

**WPMtek(Wei Pan Microelectronics)** · MOSFETs · TO-220

WTM30N65AP from WPMtek(Wei Pan Microelectronics), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with a built-in ESD diode (2000 V HBM rating) and a threshold of 2.0 to 4.0 V. |
| 2 | D | passive | Drain, also connected to the mounting tab; drain-source voltage 650 V max and continuous drain current 30 A at TC=25℃. |
| 3 | S | passive | Source; body diode continuous forward current 30 A and pulsed 80 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WPMtek(Wei Pan Microelectronics) |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current - Continuous | ID |  |  | 30 | A | TC = 25℃ | 1 |
| Drain Current - Continuous | ID |  |  | 15.8 | A | TC = 100℃ | 1 |
| Drain Current - Pulsed | IDM |  |  | 80 | A |  | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 454 | mJ |  | 1 |
| Avalanche Current | IAR |  |  | 3.1 | A |  | 1 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VDS=0…400V | 1 |
| Reverse diode dv/dt | dv/dt |  |  | 15 | V/ns | VDS=0…400V, IDS≤ID | 1 |
| Gate source ESD (HBM) | VESD(G-S) |  |  | 2000 | V | HBM C=100pF, R=1.5KΩ | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case, Max. | RθJC |  |  | 0.7 | ℃/W |  | 1 |
| Thermal Resistance, Junction-to-Ambient, Max. | RθJA |  |  | 62.5 | ℃/W |  | 1 |
| Gate Threshold Voltage | VGS | 2 |  | 4 | V | VDS = VGS, ID = 1.1 mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 115 | 130 | mΩ | VGS = 10 V, ID = 10.2 A | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS = 0 V, ID = 1mA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 650 V, VGS = 0 | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 100 | μA | VDS = 650 V, TC = 150℃ | 2 |
| Gate-Body Leakage Current | IGSS | -1 |  | 1 | μA | VGS = ±20 V, VDS = 0 V | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 30 | A |  | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 80 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.3 | V | VGS = 0 V, IS = 14.3 A | 2 |

## CAD (KiCad official)

- Symbol: `WTM30N65AP`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `wtm30n65ap-etched.step` / `wtm30n65ap-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wtm30n65ap.step` / `wtm30n65ap.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WPMtek(Wei Pan Microelectronics) datasheet](docs/wtm30n65ap-datasheet.pdf) (10 pp, sha256 `a8fdabb0977217f8`, retrieved 2026-10-31, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wtm30n65ap-datasheet.pdf)