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Contents

README

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WTM30N65AP

WPMtek(Wei Pan Microelectronics) · MOSFETs · TO-220

WTM30N65AP from WPMtek(Wei Pan Microelectronics), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with a built-in ESD diode (2000 V HBM rating) and a threshold of 2.0 to 4.0 V.
2 D passive Drain, also connected to the mounting tab; drain-source voltage 650 V max and continuous drain current 30 A at TC=25℃.
3 S passive Source; body diode continuous forward current 30 A and pulsed 80 A.

Key specifications

Parameter Value
Manufacturer WPMtek(Wei Pan Microelectronics)
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current - Continuous ID 30 A TC = 25℃ 1
Drain Current - Continuous ID 15.8 A TC = 100℃ 1
Drain Current - Pulsed IDM 80 A 1
Single Pulsed Avalanche Energy EAS 454 mJ 1
Avalanche Current IAR 3.1 A 1
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0…400V 1
Reverse diode dv/dt dv/dt 15 V/ns VDS=0…400V, IDS≤ID 1
Gate source ESD (HBM) VESD(G-S) 2000 V HBM C=100pF, R=1.5KΩ 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case, Max. RθJC 0.7 ℃/W 1
Thermal Resistance, Junction-to-Ambient, Max. RθJA 62.5 ℃/W 1
Gate Threshold Voltage VGS 2 4 V VDS = VGS, ID = 1.1 mA 2
Static Drain-Source On-Resistance RDS(ON) 115 130 mΩ VGS = 10 V, ID = 10.2 A 2
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 1mA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 650 V, VGS = 0 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS = 650 V, TC = 150℃ 2
Gate-Body Leakage Current IGSS -1 1 μA VGS = ±20 V, VDS = 0 V 2
Maximum Continuous Drain-Source Diode Forward Current IS 30 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 80 A 2
Drain-Source Diode Forward Voltage VSD 1.3 V VGS = 0 V, IS = 14.3 A 2

CAD (KiCad official)

  • Symbol: WTM30N65AP
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: wtm30n65ap-etched.step / wtm30n65ap-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wtm30n65ap.step / wtm30n65ap.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WPMtek(Wei Pan Microelectronics) datasheet (10 pp, sha256 a8fdabb0977217f8, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF