component
WTM30N65AP
Public Made by Adomby adom
WPMtek(Wei Pan Microelectronics) MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWTM30N65AP
WPMtek(Wei Pan Microelectronics) · MOSFETs · TO-220
WTM30N65AP from WPMtek(Wei Pan Microelectronics), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with a built-in ESD diode (2000 V HBM rating) and a threshold of 2.0 to 4.0 V. |
| 2 | D | passive | Drain, also connected to the mounting tab; drain-source voltage 650 V max and continuous drain current 30 A at TC=25℃. |
| 3 | S | passive | Source; body diode continuous forward current 30 A and pulsed 80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WPMtek(Wei Pan Microelectronics) |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current - Continuous | ID | 30 | A | TC = 25℃ | 1 | ||
| Drain Current - Continuous | ID | 15.8 | A | TC = 100℃ | 1 | ||
| Drain Current - Pulsed | IDM | 80 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 454 | mJ | 1 | |||
| Avalanche Current | IAR | 3.1 | A | 1 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0…400V | 1 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0…400V, IDS≤ID | 1 | ||
| Gate source ESD (HBM) | VESD(G-S) | 2000 | V | HBM C=100pF, R=1.5KΩ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case, Max. | RθJC | 0.7 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient, Max. | RθJA | 62.5 | ℃/W | 1 | |||
| Gate Threshold Voltage | VGS | 2 | 4 | V | VDS = VGS, ID = 1.1 mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 115 | 130 | mΩ | VGS = 10 V, ID = 10.2 A | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0 V, ID = 1mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 650 V, VGS = 0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS = 650 V, TC = 150℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -1 | 1 | μA | VGS = ±20 V, VDS = 0 V | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 30 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 80 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.3 | V | VGS = 0 V, IS = 14.3 A | 2 |
CAD (KiCad official)
- Symbol:
WTM30N65AP - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
wtm30n65ap-etched.step/wtm30n65ap-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wtm30n65ap.step/wtm30n65ap.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WPMtek(Wei Pan Microelectronics) datasheet (10 pp, sha256
a8fdabb0977217f8, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).