main
Ray Set visibility: public d86f832 16d ago
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  "title": "WTM25N65VMP",
  "brief": "WPMtek Wei Pan Microelectronics MOSFETs, TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "package": "TO-247-3L",
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    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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      "checked_at": "2026-10-19T10:30:49Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "error"
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      "mouser": {
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        "status": "no match"
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    "pins": [
      {
        "number": "1",
        "name": "Gate",
        "type": "input",
        "description": "Gate terminal of the 650 V N-channel MOSFET; the datasheet rates VGS at ±30 V."
      },
      {
        "number": "2",
        "name": "Drain",
        "type": "passive",
        "description": "Drain terminal; rated VDS 650 V with continuous drain current ID of 25 A at TC=25°C (12.5 A at 100°C case per the ratings table, 17.6 A at Tc=100°C)."
      },
      {
        "number": "3",
        "name": "Source",
        "type": "passive",
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  "metadata": {
    "specs": {
      "Manufacturer": "WPMtek Wei Pan Microelectronics",
      "Package": "TO-247-3L",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "characteristics": {
      "version": 1,
      "source": "datasheet",
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      "rows": [
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          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 650,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, ID=250uA",
          "source_page": 2,
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        },
        {
          "name": "Gate-Source Leakage Current (reverse bias)",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
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          "conditions": "VGS=-30V, VDS=0V",
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        {
          "name": "Gate-Source Leakage Current (forward bias)",
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          "conditions": "VGS=30V, VDS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Leakage Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "uA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=650V, VGS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Static Drain-Source On-State Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
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          "max": 0.4,
          "conditions": "VGS=10V, ID=12.5A",
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        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(TH)",
          "kind": "electrical",
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          "max": 4,
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          "source_page": 2,
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        {
          "name": "Drain-Source Voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 650,
          "conditions": "",
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        },
        {
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        },
        {
          "name": "Continuous Drain Current",
          "symbol": "ID",
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          "unit": "A",
          "min": null,
          "typ": null,
          "max": 25,
          "conditions": "Tc=25°C",
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        },
        {
          "name": "Continuous Drain Current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
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          "max": 17.6,
          "conditions": "Tc=100°C",
          "source_page": 1,
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        },
        {
          "name": "Pulsed Drain Current",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "Note 2: pulse width limited by maximum junction temperature",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Avalanche Energy Single Pulsed",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
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          "conditions": "Note 3: L=6.1mH, VDD=50V, RG=25Ω, Starting TJ=25°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Peak Diode Recovery dv/dt",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "Note 4: ISD≤25A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Power Dissipation (TO-247)",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 104,
          "conditions": "TO-247 package",
          "source_page": 1,
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        },
        {
          "name": "Operating Junction and Storage Temperature",
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          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        },
        {
          "name": "Thermal Resistance Junction to Ambient",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 62.5,
          "max": null,
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          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance Junction to Case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 1.2,
          "max": null,
          "conditions": "Junction to Case",
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    }
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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