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WTM25N65VMP
Public Made by Adomby adom
WPMtek Wei Pan Microelectronics MOSFETs, TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWTM25N65VMP
WPMtek Wei Pan Microelectronics · MOSFETs · TO-247-3L
WTM25N65VMP from WPMtek Wei Pan Microelectronics, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the 650 V N-channel MOSFET; the datasheet rates VGS at ±30 V. |
| 2 | Drain | passive | Drain terminal; rated VDS 650 V with continuous drain current ID of 25 A at TC=25°C (12.5 A at 100°C case per the ratings table, 17.6 A at Tc=100°C). |
| 3 | Source | passive | Source terminal, the reference for VGS and the body-diode source; the datasheet gives no separate limit for this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WPMtek Wei Pan Microelectronics |
| Package | TO-247-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 2 | ||
| Gate-Source Leakage Current (reverse bias) | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate-Source Leakage Current (forward bias) | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=650V, VGS=0V | 2 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 0.4 | Ω | VGS=10V, ID=12.5A | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 25 | A | Tc=25°C | 1 | ||
| Continuous Drain Current | ID | 17.6 | A | Tc=100°C | 1 | ||
| Pulsed Drain Current | IDM | 100 | A | Note 2: pulse width limited by maximum junction temperature | 1 | ||
| Avalanche Energy Single Pulsed | EAS | 780 | mJ | Note 3: L=6.1mH, VDD=50V, RG=25Ω, Starting TJ=25°C | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | Note 4: ISD≤25A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C | 1 | ||
| Power Dissipation (TO-247) | PD | 104 | W | TO-247 package | 1 | ||
| Operating Junction and Storage Temperature | Tj,Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Ambient | RthJA | 62.5 | °C/W | Junction to Ambient | 1 | ||
| Thermal Resistance Junction to Case | RthJC | 1.2 | °C/W | Junction to Case | 1 |
CAD (KiCad official)
- Symbol:
WTM25N65VMP - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files:
wtm25n65vmp-etched.step/wtm25n65vmp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wtm25n65vmp.step/wtm25n65vmp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WPMtek Wei Pan Microelectronics datasheet (8 pp, sha256
5de5eea0e784b085, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).