# WTM25N65VMP

**WPMtek Wei Pan Microelectronics** · MOSFETs · TO-247-3L

WTM25N65VMP from WPMtek Wei Pan Microelectronics, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the 650 V N-channel MOSFET; the datasheet rates VGS at ±30 V. |
| 2 | Drain | passive | Drain terminal; rated VDS 650 V with continuous drain current ID of 25 A at TC=25°C (12.5 A at 100°C case per the ratings table, 17.6 A at Tc=100°C). |
| 3 | Source | passive | Source terminal, the reference for VGS and the body-diode source; the datasheet gives no separate limit for this pin. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WPMtek Wei Pan Microelectronics |
| Package | TO-247-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS=0V, ID=250uA | 2 |
| Gate-Source Leakage Current (reverse bias) | IGSS | -100 |  |  | nA | VGS=-30V, VDS=0V | 2 |
| Gate-Source Leakage Current (forward bias) | IGSS |  |  | 100 | nA | VGS=30V, VDS=0V | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=650V, VGS=0V | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  |  | 0.4 | Ω | VGS=10V, ID=12.5A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source Voltage | VDS |  |  | 650 | V |  | 1 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 25 | A | Tc=25°C | 1 |
| Continuous Drain Current | ID |  |  | 17.6 | A | Tc=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 100 | A | Note 2: pulse width limited by maximum junction temperature | 1 |
| Avalanche Energy Single Pulsed | EAS |  |  | 780 | mJ | Note 3: L=6.1mH, VDD=50V, RG=25Ω, Starting TJ=25°C | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 50 | V/ns | Note 4: ISD≤25A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C | 1 |
| Power Dissipation (TO-247) | PD |  |  | 104 | W | TO-247 package | 1 |
| Operating Junction and Storage Temperature | Tj,Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance Junction to Ambient | RthJA |  | 62.5 |  | °C/W | Junction to Ambient | 1 |
| Thermal Resistance Junction to Case | RthJC |  | 1.2 |  | °C/W | Junction to Case | 1 |

## CAD (KiCad official)

- Symbol: `WTM25N65VMP`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files: `wtm25n65vmp-etched.step` / `wtm25n65vmp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wtm25n65vmp.step` / `wtm25n65vmp.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WPMtek Wei Pan Microelectronics datasheet](docs/wtm25n65vmp-datasheet.pdf) (8 pp, sha256 `5de5eea0e784b085`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wtm25n65vmp-datasheet.pdf)