# WTM22N65AP

**WPMtek(Wei Pan Microelectronics)** · MOSFETs · TO-220

WTM22N65AP from WPMtek(Wei Pan Microelectronics), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30 V maximum, with a threshold of 2.5 V to 3.5 V and RDS(on) specified at VGS = 10 V. |
| 2 | D | passive | Drain (also connected to the tab); drain-source voltage is rated at 650 V with 22 A continuous drain current and 60 A pulsed. |
| 3 | S | passive | Source; body diode conducts from source to drain, with pulsed diode current up to 60 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WPMtek(Wei Pan Microelectronics) |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 650V, VGS = 0V, TJ = 25ºC | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 100 | µA | VDS = 650V, VGS = 0V, TJ = 150ºC | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±30V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2.5 |  | 3.5 | V | VDS = VGS, ID = 0.25mA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 0.14 | 0.17 | Ω | VGS = 10V, ID = 10A | 2 |
| Pulsed Diode Forward Current | ISM |  |  | 60 | A |  | 2 |
| Body Diode Voltage | VSD |  | 0.9 | 1.2 | V | TJ = 25ºC, ISD = 22A, VGS = 0V | 2 |
| Drain-Source Voltage | VDSS |  |  | 650 | V | VGS = 0V | 1 |
| Continuous Drain Current | ID |  |  | 22 | A | TC = 25ºC | 1 |
| Pulsed Drain Current | IDM |  |  | 60 | A | note 1 | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 480 | mJ | note 2 | 1 |
| Avalanche Current | IAR |  |  | 3.5 | A | note 1 | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 0.7 | mJ | note 1 | 1 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VDS = 0…400 V | 1 |
| Reverse diode dv/dt | dv/dt |  |  | 50 | V/ns | VDS = 0…400 V, ISD ≤ ID | 1 |
| Power Dissipation | PD |  |  | 152 | W | TC = 25ºC | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC |  | 1 |
| Thermal Resistance, Junction-to-Case | RthJC |  |  | 0.83 | K/W |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA |  |  | 62 | K/W |  | 1 |

## CAD (KiCad official)

- Symbol: `WTM22N65AP`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `wtm22n65ap-etched.step` / `wtm22n65ap-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wtm22n65ap.step` / `wtm22n65ap.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WPMtek(Wei Pan Microelectronics) datasheet](docs/wtm22n65ap-datasheet.pdf) (9 pp, sha256 `33a6f4ed42a92fec`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wtm22n65ap-datasheet.pdf)