component

WTM22N65AP

Public Made by Adom

by adom

WPMtek(Wei Pan Microelectronics) MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorswtm22n65apfactory-2.0.0extractor-text

Verified WTM22N65AP

by Ray · last 29 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

29 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: WTM22N65AP · TO-220 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-4fy7uhvw/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ wtm22n65ap.kicad_sym✓ wtm22n65ap.kicad_mod✓ wtm22n65ap.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 9d ago
viewers wtm22n65ap: viewers · Ray 9d ago
package.json Publish 0.1.0 · Ray 9d ago
page.json Set visibility: public · Ray 9d ago
README.md Publish 0.1.0 · Ray 9d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 9d ago
wtm22n65ap-etched.glb Publish 0.1.0 · Ray 9d ago
wtm22n65ap-etched.step wtm22n65ap: factory component page (tier=lcsc) · Ray 9d ago
wtm22n65ap-hero.glb wtm22n65ap: hero GLB from the etched model (keeps the MPN mark) · Ray 9d ago
wtm22n65ap-hero.overlay.json Publish 0.1.0 · Ray 9d ago
wtm22n65ap.glb Publish 0.1.0 · Ray 9d ago
wtm22n65ap.kicad_mod Publish 0.1.0 · Ray 9d ago
wtm22n65ap.kicad_sym Publish 0.1.0 · Ray 9d ago
wtm22n65ap.lbr Publish 0.1.0 · Ray 9d ago
wtm22n65ap.step Publish 0.1.0 · Ray 9d ago

WTM22N65AP

WPMtek(Wei Pan Microelectronics) · MOSFETs · TO-220

WTM22N65AP from WPMtek(Wei Pan Microelectronics), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±30 V maximum, with a threshold of 2.5 V to 3.5 V and RDS(on) specified at VGS = 10 V.
2 D passive Drain (also connected to the tab); drain-source voltage is rated at 650 V with 22 A continuous drain current and 60 A pulsed.
3 S passive Source; body diode conducts from source to drain, with pulsed diode current up to 60 A.

Key specifications

Parameter Value
Manufacturer WPMtek(Wei Pan Microelectronics)
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 650 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 650V, VGS = 0V, TJ = 25ºC 2
Zero Gate Voltage Drain Current IDSS 100 µA VDS = 650V, VGS = 0V, TJ = 150ºC 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±30V 2
Gate-Source Threshold Voltage VGS(th) 2.5 3.5 V VDS = VGS, ID = 0.25mA 2
Drain-Source On-Resistance RDS(on) 0.14 0.17 Ω VGS = 10V, ID = 10A 2
Pulsed Diode Forward Current ISM 60 A 2
Body Diode Voltage VSD 0.9 1.2 V TJ = 25ºC, ISD = 22A, VGS = 0V 2
Drain-Source Voltage VDSS 650 V VGS = 0V 1
Continuous Drain Current ID 22 A TC = 25ºC 1
Pulsed Drain Current IDM 60 A note 1 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy EAS 480 mJ note 2 1
Avalanche Current IAR 3.5 A note 1 1
Repetitive Avalanche Energy EAR 0.7 mJ note 1 1
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS = 0…400 V 1
Reverse diode dv/dt dv/dt 50 V/ns VDS = 0…400 V, ISD ≤ ID 1
Power Dissipation PD 152 W TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Case RthJC 0.83 K/W 1
Thermal Resistance, Junction-to-Ambient RthJA 62 K/W 1

CAD (KiCad official)

  • Symbol: WTM22N65AP
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: wtm22n65ap-etched.step / wtm22n65ap-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wtm22n65ap.step / wtm22n65ap.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WPMtek(Wei Pan Microelectronics) datasheet (9 pp, sha256 33a6f4ed42a92fec, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF