# WTM20N65AMP

**WPMtek(Wei Pan Microelectronics)** · MOSFETs · TO-247

WTM20N65AMP from WPMtek(Wei Pan Microelectronics), in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the MOSFET with VGS rated ±30 V, threshold 2.5 to 4.5 V at VDS = VGS, ID = 0.25 mA. |
| 2 | D | passive | Drain; VDSS 650 V, 20 A continuous at TC = 25℃ (12 A at 100℃), 57 A pulsed, and connected to the tab. |
| 3 | S | passive | Source; connects to the body diode anode, with a maximum continuous diode forward current of 20 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WPMtek(Wei Pan Microelectronics) |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS = 0 V, ID = 0.25mA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VDS = 650 V, VGS = 0 V | 2 |
| Gate-Body Leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS = 30 V, VDS = 0 V | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS = -30 V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS(th) | 2.5 |  | 4.5 | V | VDS = VGS, ID = 0.25mA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 160 | 190 | mΩ | VGS = 10 V, ID = 10 A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 20 | A |  | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 57 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS = 0 V, IS = 10 A | 2 |
| Drain-Source Voltage | VDSS |  |  | 650 | V | TC = 25℃ unless otherwise noted | 1 |
| Drain Current - Continuous | ID |  |  | 20 | A | TC = 25℃ | 1 |
| Drain Current - Continuous | ID |  |  | 12 | A | TC = 100℃ | 1 |
| Drain Current - Pulsed | IDM |  |  | 57 | A | Note 1 | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 384 | mJ | Note 2 | 1 |
| Avalanche Current | IAR |  |  | 4 | A | Note 1 | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 1.62 | mJ | Note 1 | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 20 | V/ns | Note 3 | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Maximum lead temperature for soldering purposes | TL |  |  | 300 | ℃ | 1/8" from case for 5 seconds | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 3.5 |  | ℃/W |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 62.5 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `WTM20N65AMP`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files: `wtm20n65amp-etched.step` / `wtm20n65amp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wtm20n65amp.step` / `wtm20n65amp.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WPMtek(Wei Pan Microelectronics) datasheet](docs/wtm20n65amp-datasheet.pdf) (10 pp, sha256 `e0fc212b24aa93bf`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wtm20n65amp-datasheet.pdf)