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WTM20N65AMP

WPMtek(Wei Pan Microelectronics) · MOSFETs · TO-247

WTM20N65AMP from WPMtek(Wei Pan Microelectronics), in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the MOSFET with VGS rated ±30 V, threshold 2.5 to 4.5 V at VDS = VGS, ID = 0.25 mA.
2 D passive Drain; VDSS 650 V, 20 A continuous at TC = 25℃ (12 A at 100℃), 57 A pulsed, and connected to the tab.
3 S passive Source; connects to the body diode anode, with a maximum continuous diode forward current of 20 A.

Key specifications

Parameter Value
Manufacturer WPMtek(Wei Pan Microelectronics)
Package TO-247
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 0.25mA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS = 650 V, VGS = 0 V 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 2.5 4.5 V VDS = VGS, ID = 0.25mA 2
Static Drain-Source On-Resistance RDS(on) 160 190 mΩ VGS = 10 V, ID = 10 A 2
Maximum Continuous Drain-Source Diode Forward Current IS 20 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 57 A 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0 V, IS = 10 A 2
Drain-Source Voltage VDSS 650 V TC = 25℃ unless otherwise noted 1
Drain Current - Continuous ID 20 A TC = 25℃ 1
Drain Current - Continuous ID 12 A TC = 100℃ 1
Drain Current - Pulsed IDM 57 A Note 1 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulsed Avalanche Energy EAS 384 mJ Note 2 1
Avalanche Current IAR 4 A Note 1 1
Repetitive Avalanche Energy EAR 1.62 mJ Note 1 1
Peak Diode Recovery dv/dt dv/dt 20 V/ns Note 3 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Maximum lead temperature for soldering purposes TL 300 ℃ 1/8" from case for 5 seconds 1
Thermal Resistance, Junction-to-Case RθJC 3.5 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W 1

CAD (KiCad official)

  • Symbol: WTM20N65AMP
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: wtm20n65amp-etched.step / wtm20n65amp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wtm20n65amp.step / wtm20n65amp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WPMtek(Wei Pan Microelectronics) datasheet (10 pp, sha256 e0fc212b24aa93bf, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF