# WST3078

**Winsok Semicon** · MOSFETs · SOT-23-6

WST3078 from Winsok Semicon, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20 V. |
| 2 | S2 | passive | Source of MOSFET 2. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20 V. |
| 4 | D2 | passive | Drain of MOSFET 2; drain-source voltage rated 30 V (N-channel) or -30 V (P-channel). |
| 5 | S1 | passive | Source of MOSFET 1. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-source voltage rated 30 V (N-channel) or -30 V (P-channel). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS |  |  | 30 | V |  | 1 |
| Drain-Source Voltage (P-Channel) | VDS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage (N-Channel) | VGS | -20 |  | 20 | V |  | 1 |
| Gate-Source Voltage (P-Channel) | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (N-Channel) | ID@Tc=25℃ |  |  | 3.5 | A | Tc=25℃, VGS @ 4.5V | 1 |
| Continuous Drain Current (P-Channel) | ID@Tc=25℃ |  |  | -3 | A | Tc=25℃, VGS @ 4.5V | 1 |
| Continuous Drain Current (N-Channel) | ID@Tc=70℃ |  |  | 3 | A | Tc=70℃, VGS @ 4.5V | 1 |
| Continuous Drain Current (P-Channel) | ID@Tc=70℃ |  |  | -2.4 | A | Tc=70℃, VGS @ 4.5V | 1 |
| Pulsed Drain Current (N-Channel) | IDM |  |  | 19 | A |  | 1 |
| Pulsed Drain Current (P-Channel) | IDM |  |  | -12 | A |  | 1 |
| Total Power Dissipation (N-Channel) | PD@TA=25℃ |  |  | 1.4 | W | TA=25℃ | 1 |
| Total Power Dissipation (P-Channel) | PD@TA=25℃ |  |  | 1.4 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 125 | ℃/W | Surface mounted on 1in2 pad (note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 90 | ℃/W | note 1 | 1 |
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 30 |  |  | V | VGS=0V , ID=250uA | 2 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) |  | 32 | 50 | mΩ | VGS=10V , ID=2.7A | 2 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) |  | 56 | 68 | mΩ | VGS=4.5V , ID=2A | 2 |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1.3 | 1.6 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current (N-Channel) | IDSS |  |  | 1 | uA | VDS=24V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current (N-Channel) | IDSS |  |  | 30 | uA | VDS=24V , VGS=0V , TJ=85℃ | 2 |
| Gate-Source Leakage Current (N-Channel) | IGSS | -10 |  | 10 | uA | VGS=±20V , VDS=0V | 2 |
| Turn-On Delay Time (N-Channel) | Td(on) |  | 5.3 | 8 | ns | VDD=10V , VGEN=4.5V , RG=6Ω ID=2A RL=10Ω | 2 |
| Rise Time (N-Channel) | Tr |  | 11 | 16 | ns |  | 2 |
| Turn-Off Delay Time (N-Channel) | Td(off) |  | 12 | 17 | ns |  | 2 |
| Fall Time (N-Channel) | Tf |  | 2.6 | 4 | ns |  | 2 |
| Continuous Source-Drain Diode Current (N-Channel) | IS |  |  | 1 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Diode Forward Current (N-Channel) | ISM |  |  | 5 | A |  | 2 |
| Body Diode Voltage (N-Channel) | VSD |  | 0.75 | 1.1 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -30 |  |  | V | VGS=0V , ID=-250uA | 3 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) |  | 78 | 100 | mΩ | VGS=-10V , ID=-2A | 3 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) |  | 120 | 170 | mΩ | VGS=-4.5V , ID=-1.5A | 3 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1.3 | -1.6 | -2.5 | V | VGS=VDS , ID =-250uA | 3 |
| Drain-Source Leakage Current (P-Channel) | IDSS |  |  | -1 | uA | VDS=-24V , VGS=0V , TJ=25℃ | 3 |
| Gate-Source Leakage Current (P-Channel) | IGSS | -10 |  | 10 | uA | VGS=±20V , VDS=0V | 3 |
| Turn-On Delay Time (P-Channel) | Td(on) |  | 5.3 | 8 | ns | VDD=-15V , VGEN=-10V , RG=6Ω ID=-1A ,RL=15Ω. | 3 |
| Continuous Source-Drain Diode Current (P-Channel) | IS |  |  | -3.2 | A | VG=VD=0V , Force Current | 3 |
| Pulsed Diode Forward Current (P-Channel) | ISM |  |  | -15 | A |  | 3 |
| Body Diode Voltage (P-Channel) | VSD |  | 0.75 | -1.1 | V | VGS=0V , IS=-1A , TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `WST3078`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `wst3078-etched.step` / `wst3078-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wst3078.step` / `wst3078.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586202468674121728) (11 pp, sha256 `e05ffd14dd667707`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wst3078-datasheet.pdf)