component
WST3078
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWST3078
Winsok Semicon · MOSFETs · SOT-23-6
WST3078 from Winsok Semicon, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20 V. |
| 2 | S2 | passive | Source of MOSFET 2. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20 V. |
| 4 | D2 | passive | Drain of MOSFET 2; drain-source voltage rated 30 V (N-channel) or -30 V (P-channel). |
| 5 | S1 | passive | Source of MOSFET 1. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-source voltage rated 30 V (N-channel) or -30 V (P-channel). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 30 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -30 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID@Tc=25℃ | 3.5 | A | Tc=25℃, VGS @ 4.5V | 1 | ||
| Continuous Drain Current (P-Channel) | ID@Tc=25℃ | -3 | A | Tc=25℃, VGS @ 4.5V | 1 | ||
| Continuous Drain Current (N-Channel) | ID@Tc=70℃ | 3 | A | Tc=70℃, VGS @ 4.5V | 1 | ||
| Continuous Drain Current (P-Channel) | ID@Tc=70℃ | -2.4 | A | Tc=70℃, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 19 | A | 1 | |||
| Pulsed Drain Current (P-Channel) | IDM | -12 | A | 1 | |||
| Total Power Dissipation (N-Channel) | PD@TA=25℃ | 1.4 | W | TA=25℃ | 1 | ||
| Total Power Dissipation (P-Channel) | PD@TA=25℃ | 1.4 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | Surface mounted on 1in2 pad (note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 90 | ℃/W | note 1 | 1 | ||
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 30 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 32 | 50 | mΩ | VGS=10V , ID=2.7A | 2 | |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 56 | 68 | mΩ | VGS=4.5V , ID=2A | 2 | |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1.3 | 1.6 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current (N-Channel) | IDSS | 1 | uA | VDS=24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (N-Channel) | IDSS | 30 | uA | VDS=24V , VGS=0V , TJ=85℃ | 2 | ||
| Gate-Source Leakage Current (N-Channel) | IGSS | -10 | 10 | uA | VGS=±20V , VDS=0V | 2 | |
| Turn-On Delay Time (N-Channel) | Td(on) | 5.3 | 8 | ns | VDD=10V , VGEN=4.5V , RG=6Ω ID=2A RL=10Ω | 2 | |
| Rise Time (N-Channel) | Tr | 11 | 16 | ns | 2 | ||
| Turn-Off Delay Time (N-Channel) | Td(off) | 12 | 17 | ns | 2 | ||
| Fall Time (N-Channel) | Tf | 2.6 | 4 | ns | 2 | ||
| Continuous Source-Drain Diode Current (N-Channel) | IS | 1 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Diode Forward Current (N-Channel) | ISM | 5 | A | 2 | |||
| Body Diode Voltage (N-Channel) | VSD | 0.75 | 1.1 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -30 | V | VGS=0V , ID=-250uA | 3 | ||
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 78 | 100 | mΩ | VGS=-10V , ID=-2A | 3 | |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 120 | 170 | mΩ | VGS=-4.5V , ID=-1.5A | 3 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1.3 | -1.6 | -2.5 | V | VGS=VDS , ID =-250uA | 3 |
| Drain-Source Leakage Current (P-Channel) | IDSS | -1 | uA | VDS=-24V , VGS=0V , TJ=25℃ | 3 | ||
| Gate-Source Leakage Current (P-Channel) | IGSS | -10 | 10 | uA | VGS=±20V , VDS=0V | 3 | |
| Turn-On Delay Time (P-Channel) | Td(on) | 5.3 | 8 | ns | VDD=-15V , VGEN=-10V , RG=6Ω ID=-1A ,RL=15Ω. | 3 | |
| Continuous Source-Drain Diode Current (P-Channel) | IS | -3.2 | A | VG=VD=0V , Force Current | 3 | ||
| Pulsed Diode Forward Current (P-Channel) | ISM | -15 | A | 3 | |||
| Body Diode Voltage (P-Channel) | VSD | 0.75 | -1.1 | V | VGS=0V , IS=-1A , TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
WST3078 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
wst3078-etched.step/wst3078-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wst3078.step/wst3078.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (11 pp, sha256
e05ffd14dd667707, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).