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WST2078

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Winsok Semicon MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WST2078

Winsok Semicon · MOSFETs · SOT-23-6L

WST2078 from Winsok Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1; gate-source voltage limited to ±12 V.
2 S2 passive Source of MOSFET 2; drain-source voltage rating is 20 V for N-channel and -20 V for P-channel.
3 G2 input Gate of MOSFET 2; gate-source voltage limited to ±12 V.
4 D2 passive Drain of MOSFET 2; pulsed drain current up to 20 A (N-ch) or -13 A (P-ch).
5 S1 passive Source of MOSFET 1; drain-source voltage rating is 20 V for N-channel and -20 V for P-channel.
6 D1 passive Drain of MOSFET 1; pulsed drain current up to 20 A (N-ch) or -13 A (P-ch).

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDS 20 V 1
Drain-Source Voltage (P-Channel) VDS -20 V 1
Gate-Source Voltage (N-Channel) VGS -12 12 V 1
Gate-Source Voltage (P-Channel) VGS -12 12 V 1
Continuous Drain Current (N-Channel) ID@Tc=25℃ 5.6 A VGS @ 4.5V, Tc=25℃ 1
Continuous Drain Current (P-Channel) ID@Tc=25℃ -4.5 A VGS @ 4.5V, Tc=25℃ 1
Continuous Drain Current (N-Channel) ID@Tc=70℃ 4 A VGS @ 4.5V, Tc=70℃ 1
Continuous Drain Current (P-Channel) ID@Tc=70℃ -2.6 A VGS @ 4.5V, Tc=70℃ 1
Pulsed Drain Current (N-Channel) IDM 20 A 1
Pulsed Drain Current (P-Channel) IDM -13 A 1
Total Power Dissipation PD@TA=25℃ 1.4 W TA=25℃; same value printed for N and P columns 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 125 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 70 ℃/W Note 1 1
Drain-Source Breakdown Voltage (N-Channel) BVDSS 20 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance (N-Channel) RDS(ON) 30 38 mΩ VGS=4.5V, ID=5A 2
Static Drain-Source On-Resistance (N-Channel) RDS(ON) 40 54 mΩ VGS=2.5V, ID=4A 2
Static Drain-Source On-Resistance (N-Channel) RDS(ON) 60 85 mΩ VGS=1.8V, ID=1A 2
Gate Threshold Voltage (N-Channel) VGS(th) 0.5 0.7 1 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current (N-Channel) IDSS 1 uA VDS=16V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (N-Channel) IDSS 5 uA VDS=16V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current (N-Channel) IGSS -100 100 nA VGS=±8V, VDS=0V 2
Gate Resistance (N-Channel) Rg 2.2 3.4 Ω VDS=0V, VGS=0V, f=1MHz 2
Turn-On Delay Time (N-Channel) Td(on) 2.4 4.3 ns VDD=10V, VGEN=4.5V, RG=6Ω, ID=3A, RL=10Ω 2
Rise Time (N-Channel) Tr 13 23 ns VDD=10V, VGEN=4.5V, RG=6Ω, ID=3A, RL=10Ω 2
Turn-Off Delay Time (N-Channel) Td(off) 15.5 28 ns VDD=10V, VGEN=4.5V, RG=6Ω, ID=3A, RL=10Ω 2
Fall Time (N-Channel) Tf 3 5.5 ns VDD=10V, VGEN=4.5V, RG=6Ω, ID=3A, RL=10Ω 2
Continuous Source-Drain Diode Current (N-Channel) IS 1 A VG=VD=0V, Force Current 2
Pulsed Diode Forward Current (N-Channel) ISM 20 A 2
Body Diode Voltage (N-Channel) VSD 1.1 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Breakdown Voltage (P-Channel) BVDSS -20 V VGS=0V, ID=-250uA 3
Static Drain-Source On-Resistance (P-Channel) RDS(ON) 65 85 mΩ VGS=-4.5V, ID=-3A 3
Static Drain-Source On-Resistance (P-Channel) RDS(ON) 90 120 mΩ VGS=-2.5V, ID=-2A 3
Static Drain-Source On-Resistance (P-Channel) RDS(ON) 130 210 mΩ VGS=-1.8V, ID=-1.5A 3
Gate Threshold Voltage (P-Channel) VGS(th) -0.3 -0.5 -1 V VGS=VDS, ID=-250uA 3
Drain-Source Leakage Current (P-Channel) IDSS 1 uA VDS=-16V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current (P-Channel) IDSS 5 uA VDS=-16V, VGS=0V, TJ=55℃ 3
Gate-Source Leakage Current (P-Channel) IGSS -100 100 nA VGS=±8V, VDS=0V 3
Continuous Source-Drain Diode Current (P-Channel) IS -3.3 A VG=VD=0V, Force Current 3
Pulsed Diode Forward Current (P-Channel) ISM -13 A 3
Body Diode Voltage (P-Channel) VSD -1.1 V VGS=0V, IS=-1A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: WST2078
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: wst2078-etched.step / wst2078-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wst2078.step / wst2078.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (8 pp, sha256 3f190dc9ae0101c3, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF