component
WST2078
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWST2078
Winsok Semicon · MOSFETs · SOT-23-6L
WST2078 from Winsok Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±12 V. |
| 2 | S2 | passive | Source of MOSFET 2; drain-source voltage rating is 20 V for N-channel and -20 V for P-channel. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±12 V. |
| 4 | D2 | passive | Drain of MOSFET 2; pulsed drain current up to 20 A (N-ch) or -13 A (P-ch). |
| 5 | S1 | passive | Source of MOSFET 1; drain-source voltage rating is 20 V for N-channel and -20 V for P-channel. |
| 6 | D1 | passive | Drain of MOSFET 1; pulsed drain current up to 20 A (N-ch) or -13 A (P-ch). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 20 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -20 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -12 | 12 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID@Tc=25℃ | 5.6 | A | VGS @ 4.5V, Tc=25℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID@Tc=25℃ | -4.5 | A | VGS @ 4.5V, Tc=25℃ | 1 | ||
| Continuous Drain Current (N-Channel) | ID@Tc=70℃ | 4 | A | VGS @ 4.5V, Tc=70℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID@Tc=70℃ | -2.6 | A | VGS @ 4.5V, Tc=70℃ | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 20 | A | 1 | |||
| Pulsed Drain Current (P-Channel) | IDM | -13 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.4 | W | TA=25℃; same value printed for N and P columns | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 70 | ℃/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 30 | 38 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 40 | 54 | mΩ | VGS=2.5V, ID=4A | 2 | |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 60 | 85 | mΩ | VGS=1.8V, ID=1A | 2 | |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 0.5 | 0.7 | 1 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current (N-Channel) | IDSS | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (N-Channel) | IDSS | 5 | uA | VDS=16V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current (N-Channel) | IGSS | -100 | 100 | nA | VGS=±8V, VDS=0V | 2 | |
| Gate Resistance (N-Channel) | Rg | 2.2 | 3.4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Turn-On Delay Time (N-Channel) | Td(on) | 2.4 | 4.3 | ns | VDD=10V, VGEN=4.5V, RG=6Ω, ID=3A, RL=10Ω | 2 | |
| Rise Time (N-Channel) | Tr | 13 | 23 | ns | VDD=10V, VGEN=4.5V, RG=6Ω, ID=3A, RL=10Ω | 2 | |
| Turn-Off Delay Time (N-Channel) | Td(off) | 15.5 | 28 | ns | VDD=10V, VGEN=4.5V, RG=6Ω, ID=3A, RL=10Ω | 2 | |
| Fall Time (N-Channel) | Tf | 3 | 5.5 | ns | VDD=10V, VGEN=4.5V, RG=6Ω, ID=3A, RL=10Ω | 2 | |
| Continuous Source-Drain Diode Current (N-Channel) | IS | 1 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Diode Forward Current (N-Channel) | ISM | 20 | A | 2 | |||
| Body Diode Voltage (N-Channel) | VSD | 1.1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -20 | V | VGS=0V, ID=-250uA | 3 | ||
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 65 | 85 | mΩ | VGS=-4.5V, ID=-3A | 3 | |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 90 | 120 | mΩ | VGS=-2.5V, ID=-2A | 3 | |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 130 | 210 | mΩ | VGS=-1.8V, ID=-1.5A | 3 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -0.3 | -0.5 | -1 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-Source Leakage Current (P-Channel) | IDSS | 1 | uA | VDS=-16V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current (P-Channel) | IDSS | 5 | uA | VDS=-16V, VGS=0V, TJ=55℃ | 3 | ||
| Gate-Source Leakage Current (P-Channel) | IGSS | -100 | 100 | nA | VGS=±8V, VDS=0V | 3 | |
| Continuous Source-Drain Diode Current (P-Channel) | IS | -3.3 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Diode Forward Current (P-Channel) | ISM | -13 | A | 3 | |||
| Body Diode Voltage (P-Channel) | VSD | -1.1 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
WST2078 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
wst2078-etched.step/wst2078-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wst2078.step/wst2078.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (8 pp, sha256
3f190dc9ae0101c3, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).