# WST2038

**Winsok Semicon** · MOSFETs · SOT-23-6L

WST2038 from Winsok Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±12 V. |
| 2 | S2 | passive | Source of MOSFET 2; drain-source voltage rating is 20 V in magnitude. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±12 V. |
| 4 | D2 | passive | Drain of MOSFET 2; drain-source voltage rating is 20 V in magnitude. |
| 5 | S1 | passive | Source of MOSFET 1; drain-source voltage rating is 20 V in magnitude. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-source voltage rating is 20 V in magnitude. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 20 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) |  | 50 | 65 | mΩ | VGS=4.5V, ID=3A | 2 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) |  | 65 | 90 | mΩ | VGS=2.5V, ID=1.7A | 2 |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 0.5 | 0.7 | 1 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current (N-Channel) | IDSS |  |  | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current (N-Channel) | IDSS |  |  | 5 | uA | VDS=16V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current (N-Channel) | IGSS | -100 |  | 100 | nA | VGS=±8V, VDS=0V | 2 |
| Gate Resistance (N-Channel) | Rg |  | 2.2 | 3.4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Continuous Source-Drain Diode Current (N-Channel) | IS |  |  | 1 | A | VG=VD=0V, Force Current | 2 |
| Body Diode Voltage (N-Channel) | VSD |  |  | 1.3 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -20 |  |  | V | VGS=0V, ID=-250uA | 3 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) |  | 90 | 120 | mΩ | VGS=-4.5V, ID=-2A | 3 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) |  | 130 | 180 | mΩ | VGS=-2.5V, ID=-1A | 3 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -0.3 | -0.5 | -1 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-Source Leakage Current (P-Channel) | IDSS |  |  | 1 | uA | VDS=-16V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current (P-Channel) | IDSS |  |  | 5 | uA | VDS=-16V, VGS=0V, TJ=55℃ | 3 |
| Gate-Source Leakage Current (P-Channel) | IGSS | -100 |  | 100 | nA | VGS=±8V, VDS=0V | 3 |
| Continuous Source-Drain Diode Current (P-Channel) | IS |  |  | -1 | A | VG=VD=0V, Force Current | 3 |
| Body Diode Voltage (P-Channel) | VSD |  |  | -1.3 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
| Drain-Source Voltage (N-Channel) | VDS |  |  | 20 | V | N-Channel | 1 |
| Drain-Source Voltage (P-Channel) | VDS | -20 |  |  | V | P-Channel | 1 |
| Gate-Source Voltage (N-Channel) | VGS | -12 |  | 12 | V | N-Channel | 1 |
| Gate-Source Voltage (P-Channel) | VGS | -12 |  | 12 | V | P-Channel | 1 |
| Continuous Drain Current (N-Channel) | ID@Tc=25℃ |  |  | 3 | A | Tc=25℃, VGS @ 4.5V, N-Channel | 1 |
| Continuous Drain Current (P-Channel) | ID@Tc=25℃ | -2 |  |  | A | Tc=25℃, VGS @ 4.5V, P-Channel | 1 |
| Continuous Drain Current (N-Channel) | ID@Tc=70℃ |  |  | 2.1 | A | Tc=70℃, VGS @ 4.5V, N-Channel | 1 |
| Continuous Drain Current (P-Channel) | ID@Tc=70℃ | -1.2 |  |  | A | Tc=70℃, VGS @ 4.5V, P-Channel | 1 |
| Pulsed Drain Current (N-Channel) | IDM |  |  | 12 | A | Pulsed, N-Channel | 1 |
| Pulsed Drain Current (P-Channel) | IDM | -8 |  |  | A | Pulsed, P-Channel | 1 |
| Total Power Dissipation (N-Channel) | PD@TA=25℃ |  |  | 0.83 | W | TA=25℃, N-Channel | 1 |
| Total Power Dissipation (P-Channel) | PD@TA=25℃ |  |  | 0.83 | W | TA=25℃, P-Channel | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 150 | ℃/W | Surface mounted on 1 inch2 FR-4 board with 2OZ copper (note 1) | 1 |

## CAD (KiCad official)

- Symbol: `WST2038`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `wst2038-etched.step` / `wst2038-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wst2038.step` / `wst2038.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Winsok Semicon datasheet](docs/wst2038-datasheet.pdf) (10 pp, sha256 `c034c33ffa45e4f4`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wst2038-datasheet.pdf)