component
WST2038
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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WST2038
Winsok Semicon · MOSFETs · SOT-23-6L
WST2038 from Winsok Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±12 V. |
| 2 | S2 | passive | Source of MOSFET 2; drain-source voltage rating is 20 V in magnitude. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±12 V. |
| 4 | D2 | passive | Drain of MOSFET 2; drain-source voltage rating is 20 V in magnitude. |
| 5 | S1 | passive | Source of MOSFET 1; drain-source voltage rating is 20 V in magnitude. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-source voltage rating is 20 V in magnitude. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 50 | 65 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 65 | 90 | mΩ | VGS=2.5V, ID=1.7A | 2 | |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 0.5 | 0.7 | 1 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current (N-Channel) | IDSS | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (N-Channel) | IDSS | 5 | uA | VDS=16V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current (N-Channel) | IGSS | -100 | 100 | nA | VGS=±8V, VDS=0V | 2 | |
| Gate Resistance (N-Channel) | Rg | 2.2 | 3.4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Continuous Source-Drain Diode Current (N-Channel) | IS | 1 | A | VG=VD=0V, Force Current | 2 | ||
| Body Diode Voltage (N-Channel) | VSD | 1.3 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -20 | V | VGS=0V, ID=-250uA | 3 | ||
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 90 | 120 | mΩ | VGS=-4.5V, ID=-2A | 3 | |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 130 | 180 | mΩ | VGS=-2.5V, ID=-1A | 3 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -0.3 | -0.5 | -1 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-Source Leakage Current (P-Channel) | IDSS | 1 | uA | VDS=-16V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current (P-Channel) | IDSS | 5 | uA | VDS=-16V, VGS=0V, TJ=55℃ | 3 | ||
| Gate-Source Leakage Current (P-Channel) | IGSS | -100 | 100 | nA | VGS=±8V, VDS=0V | 3 | |
| Continuous Source-Drain Diode Current (P-Channel) | IS | -1 | A | VG=VD=0V, Force Current | 3 | ||
| Body Diode Voltage (P-Channel) | VSD | -1.3 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 | ||
| Drain-Source Voltage (N-Channel) | VDS | 20 | V | N-Channel | 1 | ||
| Drain-Source Voltage (P-Channel) | VDS | -20 | V | P-Channel | 1 | ||
| Gate-Source Voltage (N-Channel) | VGS | -12 | 12 | V | N-Channel | 1 | |
| Gate-Source Voltage (P-Channel) | VGS | -12 | 12 | V | P-Channel | 1 | |
| Continuous Drain Current (N-Channel) | ID@Tc=25℃ | 3 | A | Tc=25℃, VGS @ 4.5V, N-Channel | 1 | ||
| Continuous Drain Current (P-Channel) | ID@Tc=25℃ | -2 | A | Tc=25℃, VGS @ 4.5V, P-Channel | 1 | ||
| Continuous Drain Current (N-Channel) | ID@Tc=70℃ | 2.1 | A | Tc=70℃, VGS @ 4.5V, N-Channel | 1 | ||
| Continuous Drain Current (P-Channel) | ID@Tc=70℃ | -1.2 | A | Tc=70℃, VGS @ 4.5V, P-Channel | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 12 | A | Pulsed, N-Channel | 1 | ||
| Pulsed Drain Current (P-Channel) | IDM | -8 | A | Pulsed, P-Channel | 1 | ||
| Total Power Dissipation (N-Channel) | PD@TA=25℃ | 0.83 | W | TA=25℃, N-Channel | 1 | ||
| Total Power Dissipation (P-Channel) | PD@TA=25℃ | 0.83 | W | TA=25℃, P-Channel | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 150 | ℃/W | Surface mounted on 1 inch2 FR-4 board with 2OZ copper (note 1) | 1 |
CAD (KiCad official)
- Symbol:
WST2038 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
wst2038-etched.step/wst2038-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wst2038.step/wst2038.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (10 pp, sha256
c034c33ffa45e4f4, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).