component
WSR38P10
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSR38P10
Winsok Semicon · MOSFETs · TO-220
WSR38P10 from Winsok Semicon, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; P-channel gate drive with VGS rated ±20 V and fully enhanced at VGS = -10 V (RDS(ON) 78 mΩ typ at ID = -10 A), threshold -1.2 to -2.5 V. |
| 2 | D | passive | Drain, also connected to the tab; VDS rated -100 V and continuous drain current -35 A at TC = 25 °C. |
| 3 | S | passive | Source; continuous source (body diode) current is limited to -18 A and diode forward voltage is -1.2 V max at IS = -1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -35 | A | -VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -16 | A | -VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -75 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 157 | mJ | 1 | |||
| Avalanche Current | IAS | -18.9 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 54 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 2.3 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 78 | 95 | mΩ | VGS=-10V , ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.7 | -2.5 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-48V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Single Pulse Avalanche Energy | EAS | 100 | mJ | VDD=-25V , L=0.5mH , IAS=-10A | 2 | ||
| Continuous Source Current | IS | -18 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.021 | V/℃ | Reference to 25℃ , ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 4.08 | mV/℃ | VGS=VDS , ID =-250uA | 2 | ||
| Forward Transconductance | gfs | 24 | S | VDS=-10V , ID=-10A | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 44 | nC | VDS=-50V , VGS=-10V , ID=-20A | 2 | ||
| Gate-Source Charge | Qgs | 9 | nC | VDS=-50V , VGS=-10V , ID=-20A | 2 | ||
| Gate-Drain Charge | Qgd | 6 | nC | VDS=-50V , VGS=-10V , ID=-20A | 2 | ||
| Turn-On Delay Time | Td(on) | 12 | ns | VDD=-30V , VGS=-10V , RG=6Ω, ID=-10A ,RG=30Ω. | 2 | ||
| Rise Time | Tr | 27 | ns | VDD=-30V , VGS=-10V , RG=6Ω, ID=-10A ,RG=30Ω. | 2 | ||
| Turn-Off Delay Time | Td(off) | 79 | ns | VDD=-30V , VGS=-10V , RG=6Ω, ID=-10A ,RG=30Ω. | 2 | ||
| Fall Time | Tf | 53 | ns | VDD=-30V , VGS=-10V , RG=6Ω, ID=-10A ,RG=30Ω. | 2 | ||
| Input Capacitance | Ciss | 3029 | pF | VDS=-30V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 129 | pF | VDS=-30V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 76 | pF | VDS=-30V , VGS=0V , f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
WSR38P10 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
wsr38p10-etched.step/wsr38p10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsr38p10.step/wsr38p10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
4a52fbe3518dd963, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSR38P10
**Winsok Semicon** · MOSFETs · TO-220
WSR38P10 from Winsok Semicon, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; P-channel gate drive with VGS rated ±20 V and fully enhanced at VGS = -10 V (RDS(ON) 78 mΩ typ at ID = -10 A), threshold -1.2 to -2.5 V. |
| 2 | D | passive | Drain, also connected to the tab; VDS rated -100 V and continuous drain current -35 A at TC = 25 °C. |
| 3 | S | passive | Source; continuous source (body diode) current is limited to -18 A and diode forward voltage is -1.2 V max at IS = -1 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | -35 | A | -VGS @ -10V | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | -16 | A | -VGS @ -10V | 1 |
| Pulsed Drain Current | IDM | | | -75 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 157 | mJ | | 1 |
| Avalanche Current | IAS | | | -18.9 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 54 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 2.3 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -100 | | | V | VGS=0V , ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 78 | 95 | mΩ | VGS=-10V , ID=-10A | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.7 | -2.5 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=-48V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=-48V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Single Pulse Avalanche Energy | EAS | 100 | | | mJ | VDD=-25V , L=0.5mH , IAS=-10A | 2 |
| Continuous Source Current | IS | | | -18 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | -0.021 | | V/℃ | Reference to 25℃ , ID=-1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | | 4.08 | | mV/℃ | VGS=VDS , ID =-250uA | 2 |
| Forward Transconductance | gfs | | 24 | | S | VDS=-10V , ID=-10A | 2 |
| Total Gate Charge (-4.5V) | Qg | | 44 | | nC | VDS=-50V , VGS=-10V , ID=-20A | 2 |
| Gate-Source Charge | Qgs | | 9 | | nC | VDS=-50V , VGS=-10V , ID=-20A | 2 |
| Gate-Drain Charge | Qgd | | 6 | | nC | VDS=-50V , VGS=-10V , ID=-20A | 2 |
| Turn-On Delay Time | Td(on) | | 12 | | ns | VDD=-30V , VGS=-10V , RG=6Ω, ID=-10A ,RG=30Ω. | 2 |
| Rise Time | Tr | | 27 | | ns | VDD=-30V , VGS=-10V , RG=6Ω, ID=-10A ,RG=30Ω. | 2 |
| Turn-Off Delay Time | Td(off) | | 79 | | ns | VDD=-30V , VGS=-10V , RG=6Ω, ID=-10A ,RG=30Ω. | 2 |
| Fall Time | Tf | | 53 | | ns | VDD=-30V , VGS=-10V , RG=6Ω, ID=-10A ,RG=30Ω. | 2 |
| Input Capacitance | Ciss | | 3029 | | pF | VDS=-30V , VGS=0V , f=1MHz | 2 |
| Output Capacitance | Coss | | 129 | | pF | VDS=-30V , VGS=0V , f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 76 | | pF | VDS=-30V , VGS=0V , f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `WSR38P10`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `wsr38p10-etched.step` / `wsr38p10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsr38p10.step` / `wsr38p10.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](docs/wsr38p10-datasheet.pdf) (5 pp, sha256 `4a52fbe3518dd963`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsr38p10-datasheet.pdf)