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WSR38P10

Public Made by Adom

by adom

Winsok Semicon MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WSR38P10

Winsok Semicon · MOSFETs · TO-220

WSR38P10 from Winsok Semicon, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; P-channel gate drive with VGS rated ±20 V and fully enhanced at VGS = -10 V (RDS(ON) 78 mΩ typ at ID = -10 A), threshold -1.2 to -2.5 V.
2 D passive Drain, also connected to the tab; VDS rated -100 V and continuous drain current -35 A at TC = 25 °C.
3 S passive Source; continuous source (body diode) current is limited to -18 A and diode forward voltage is -1.2 V max at IS = -1 A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ -35 A -VGS @ -10V 1
Continuous Drain Current ID@TC=100℃ -16 A -VGS @ -10V 1
Pulsed Drain Current IDM -75 A 1
Single Pulse Avalanche Energy EAS 157 mJ 1
Avalanche Current IAS -18.9 A 1
Total Power Dissipation PD@TC=25℃ 54 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 2.3 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V , ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 78 95 mΩ VGS=-10V , ID=-10A 2
Gate Threshold Voltage VGS(th) -1.2 -1.7 -2.5 V VGS=VDS , ID =-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-48V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=-48V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Single Pulse Avalanche Energy EAS 100 mJ VDD=-25V , L=0.5mH , IAS=-10A 2
Continuous Source Current IS -18 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A , TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ -0.021 V/℃ Reference to 25℃ , ID=-1mA 2
VGS(th) Temperature Coefficient △VGS(th) 4.08 mV/℃ VGS=VDS , ID =-250uA 2
Forward Transconductance gfs 24 S VDS=-10V , ID=-10A 2
Total Gate Charge (-4.5V) Qg 44 nC VDS=-50V , VGS=-10V , ID=-20A 2
Gate-Source Charge Qgs 9 nC VDS=-50V , VGS=-10V , ID=-20A 2
Gate-Drain Charge Qgd 6 nC VDS=-50V , VGS=-10V , ID=-20A 2
Turn-On Delay Time Td(on) 12 ns VDD=-30V , VGS=-10V , RG=6Ω, ID=-10A ,RG=30Ω. 2
Rise Time Tr 27 ns VDD=-30V , VGS=-10V , RG=6Ω, ID=-10A ,RG=30Ω. 2
Turn-Off Delay Time Td(off) 79 ns VDD=-30V , VGS=-10V , RG=6Ω, ID=-10A ,RG=30Ω. 2
Fall Time Tf 53 ns VDD=-30V , VGS=-10V , RG=6Ω, ID=-10A ,RG=30Ω. 2
Input Capacitance Ciss 3029 pF VDS=-30V , VGS=0V , f=1MHz 2
Output Capacitance Coss 129 pF VDS=-30V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 76 pF VDS=-30V , VGS=0V , f=1MHz 2

CAD (KiCad official)

  • Symbol: WSR38P10
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: wsr38p10-etched.step / wsr38p10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsr38p10.step / wsr38p10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 4a52fbe3518dd963, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF