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WSR135N15

Winsok Semicon · MOSFETs · TO-220AB

WSR135N15 from Winsok Semicon, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 2.5 V min, 3.5 V typ and 4.5 V max at ID=250uA.
2 D passive Drain, also connected to the tab; drain-source voltage 150 V max, continuous drain current 135 A at TC=25°C and pulsed 360 A.
3 S passive Source; continuous body-diode source current 120 A max, with diode forward voltage 1.3 V max at IS=20A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 150 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 9.5 12 mΩ VGS=10V , ID=30A 2
Gate Threshold Voltage VGS(th) 2.5 3.5 4.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=100V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 100 uA VDS=100V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Resistance Rg 1.7 2.8 Ω VDS=0V , VGS=0V , f=1MHz 2
Single Pulse Avalanche Energy EAS 200 mJ VDD=25V , L=0.5mH , IAS=43A 2
Continuous Source Current IS 120 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 406 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.3 V VGS=0V , IS=20A , TJ=25℃ 2
Drain-Source Voltage VDS 150 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 135 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 80 A VGS @ 10V 1
Pulsed Drain Current IDM 360 A TC=25°C 1
Avalanche Energy, Single pulse EAS 406 mJ L=0.5mH 1
Avalanche Current, Single pulse IAS 43 A L=0.5mH 1
Total Power Dissipation PD@TC=25℃ 160 W 1
Total Power Dissipation PD@TC=100℃ 75 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 0.78 ℃/W 1
BVDSS Temperature Coefficient △BVDSS/△TJ 0.096 V/℃ Reference to 25℃ , ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -5.5 mV/℃ 2
Forward Transconductance gfs 40 S VDS=5V , ID=30A 2
Total Gate Charge (10V) Qg 66 nC VDS=80V , VGS=10V , ID=40A 2
Gate-Source Charge Qgs 26 nC VDS=80V , VGS=10V , ID=40A 2
Gate-Drain Charge Qgd 17 nC VDS=80V , VGS=10V , ID=40A 2
Turn-On Delay Time Td(on) 36 ns VDD=80V , VGS=10V , RG=2Ω, ID=40A 2
Rise Time Tr 95 ns VDD=80V , VGS=10V , RG=2Ω, ID=40A 2
Turn-Off Delay Time Td(off) 56 ns VDD=80V , VGS=10V , RG=2Ω, ID=40A 2
Fall Time Tf 11 ns VDD=80V , VGS=10V , RG=2Ω, ID=40A 2
Input Capacitance Ciss 5460 pF VDS=25V , VGS=0V , f=1MHz 2
Output Capacitance Coss 1711 pF VDS=25V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 189 pF VDS=25V , VGS=0V , f=1MHz 2
Reverse Recovery Time trr 76 nS IF=40A,dI/dt=100A/µs,TJ=25℃ 2
Reverse Recovery Charge Qrr 285 nC IF=40A,dI/dt=100A/µs,TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSR135N15
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: wsr135n15-etched.step / wsr135n15-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsr135n15.step / wsr135n15.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (6 pp, sha256 ad5d70789ff5c9f1, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF