component
WSR135N15
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWSR135N15
Winsok Semicon · MOSFETs · TO-220AB
WSR135N15 from Winsok Semicon, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 2.5 V min, 3.5 V typ and 4.5 V max at ID=250uA. |
| 2 | D | passive | Drain, also connected to the tab; drain-source voltage 150 V max, continuous drain current 135 A at TC=25°C and pulsed 360 A. |
| 3 | S | passive | Source; continuous body-diode source current 120 A max, with diode forward voltage 1.3 V max at IS=20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 9.5 | 12 | mΩ | VGS=10V , ID=30A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.5 | 3.5 | 4.5 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=100V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | uA | VDS=100V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Gate Resistance | Rg | 1.7 | 2.8 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | |
| Single Pulse Avalanche Energy | EAS | 200 | mJ | VDD=25V , L=0.5mH , IAS=43A | 2 | ||
| Continuous Source Current | IS | 120 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 406 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | VGS=0V , IS=20A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 135 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 80 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 360 | A | TC=25°C | 1 | ||
| Avalanche Energy, Single pulse | EAS | 406 | mJ | L=0.5mH | 1 | ||
| Avalanche Current, Single pulse | IAS | 43 | A | L=0.5mH | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 160 | W | 1 | |||
| Total Power Dissipation | PD@TC=100℃ | 75 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | 150 | ℃ | 1 | |||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 0.78 | ℃/W | 1 | |||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.096 | V/℃ | Reference to 25℃ , ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -5.5 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 40 | S | VDS=5V , ID=30A | 2 | ||
| Total Gate Charge (10V) | Qg | 66 | nC | VDS=80V , VGS=10V , ID=40A | 2 | ||
| Gate-Source Charge | Qgs | 26 | nC | VDS=80V , VGS=10V , ID=40A | 2 | ||
| Gate-Drain Charge | Qgd | 17 | nC | VDS=80V , VGS=10V , ID=40A | 2 | ||
| Turn-On Delay Time | Td(on) | 36 | ns | VDD=80V , VGS=10V , RG=2Ω, ID=40A | 2 | ||
| Rise Time | Tr | 95 | ns | VDD=80V , VGS=10V , RG=2Ω, ID=40A | 2 | ||
| Turn-Off Delay Time | Td(off) | 56 | ns | VDD=80V , VGS=10V , RG=2Ω, ID=40A | 2 | ||
| Fall Time | Tf | 11 | ns | VDD=80V , VGS=10V , RG=2Ω, ID=40A | 2 | ||
| Input Capacitance | Ciss | 5460 | pF | VDS=25V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 1711 | pF | VDS=25V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 189 | pF | VDS=25V , VGS=0V , f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 76 | nS | IF=40A,dI/dt=100A/µs,TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 285 | nC | IF=40A,dI/dt=100A/µs,TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSR135N15 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
wsr135n15-etched.step/wsr135n15-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsr135n15.step/wsr135n15.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (6 pp, sha256
ad5d70789ff5c9f1, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).