# WSP85N10

**Winsok Semicon** · MOSFETs · SOP-8

WSP85N10 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (N-Ch: VDS 100V, ID 4.5A, RDS(ON) 100mΩ at VGS=10V). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS max ±20V, threshold 1.2 to 2.5V). |
| 3 | S2 | passive | Source of the P-channel MOSFET (P-Ch: VDS -100V, ID -2.5A, RDS(ON) 150mΩ at VGS=-10V). |
| 4 | G2 | input | Gate of the P-channel MOSFET (VGS max ±20V, threshold -1.3 to -2.3V). |
| 5 | D2 | passive | Drain of the P-channel MOSFET, pins 5 and 6 are tied together (VDS -100V). |
| 6 | D2 | passive | Drain of the P-channel MOSFET, pins 5 and 6 are tied together (VDS -100V). |
| 7 | D1 | passive | Drain of the N-channel MOSFET, pins 7 and 8 are tied together (VDS 100V). |
| 8 | D1 | passive | Drain of the N-channel MOSFET, pins 7 and 8 are tied together (VDS 100V). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS |  |  | 100 | V |  | 1 |
| Drain-Source Voltage (P-Ch) | VDS | -100 |  |  | V |  | 1 |
| Gate-Source Voltage (N-Ch) | VGS | -20 |  | 20 | V |  | 1 |
| Gate-Source Voltage (P-Ch) | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (N-Ch) | ID |  |  | 4.5 | A | VGS(NP)=10V, Tc=25℃ | 1 |
| Continuous Drain Current (P-Ch) | ID | -2.5 |  |  | A | VGS(NP)=10V, Tc=25℃ | 1 |
| Continuous Drain Current (N-Ch) | ID |  |  | 2.5 | A | VGS(NP)=10V, Tc=100℃ | 1 |
| Continuous Drain Current (P-Ch) | ID | -1.4 |  |  | A | VGS(NP)=10V, Tc=100℃ | 1 |
| Pulse Drain Current (N-Ch) | IDP |  |  | 10 | A | Pulse Drain Current Tested, VGS(NP)=10V | 1 |
| Pulse Drain Current (P-Ch) | IDP | -7 |  |  | A | Pulse Drain Current Tested, VGS(NP)=10V | 1 |
| Avalanche Current (N-Ch) | IAS |  |  | 3 | A | Single pulse, L=0.5mH | 1 |
| Avalanche Current (P-Ch) | IAS | -5 |  |  | A | Single pulse, L=0.5mH | 1 |
| Avalanche Energy (N-Ch) | EAS |  |  | 6.25 | mJ | Single pulse, L=0.5mH | 1 |
| Avalanche Energy (P-Ch) | EAS |  |  | 12 | mJ | Single pulse, L=0.5mH | 1 |
| Total Power Dissipation | PD |  |  | 2.1 | W | Ta=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ |  |  | 150 | ℃ |  | 1 |
| Junction to Ambient Thermal Resistance | RθJA |  |  | 60 | ℃/W | T<10s | 1 |
| Junction to Ambient Thermal Resistance | RθJA |  |  | 95 | ℃/W | Steady State, t=999s, 1in² FR-4 pad, 2oz Cu | 1 |
| Drain-Source Breakdown Voltage (N-Ch) | BVDSS | 100 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance (N-Ch) | RDS(ON) |  | 100 | 110 | mΩ | VGS=10V, ID=2.5A | 2 |
| Static Drain-Source On-Resistance (N-Ch) | RDS(ON) |  | 110 | 150 | mΩ | VGS=4.5V, ID=2A | 2 |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1.2 | 2 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current (N-Ch) | IDSS |  |  | 1 | uA | VDS=20V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current (N-Ch) | IDSS |  |  | 30 | uA | VDS=20V, VGS=0V, TJ=85℃ | 2 |
| Gate-Source Leakage Current (N-Ch) | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Resistance (N-Ch) | Rg |  | 2.5 | 3.6 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current (N-Ch) | IS |  |  | 2.5 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage (N-Ch) | VSD |  |  | 1.3 | V | VGS=0V, IS=2.5A, TJ=25℃ | 2 |
| Drain-Source Breakdown Voltage (P-Ch) | BVDSS | -100 |  |  | V | VGS=0V, ID=-250uA | 3 |
| Static Drain-Source On-Resistance (P-Ch) | RDS(ON) |  | 150 | 180 | mΩ | VGS=-10V, ID=-1.7A | 3 |
| Static Drain-Source On-Resistance (P-Ch) | RDS(ON) |  | 170 | 210 | mΩ | VGS=-4.5V, ID=-1A | 3 |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1.3 | -1.8 | -2.3 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-Source Leakage Current (P-Ch) | IDSS |  |  | -1 | uA | VDS=-20V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current (P-Ch) | IDSS |  |  | -30 | uA | VDS=-20V, VGS=0V, TJ=85℃ | 3 |
| Gate-Source Leakage Current (P-Ch) | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Continuous Source Current (P-Ch) | IS |  |  | -1.7 | A | VG=VD=0V, Force Current | 3 |
| Diode Forward Voltage (P-Ch) | VSD |  |  | -1.2 | V | VGS=0V, IS=-1.7A, TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `WSP85N10`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `wsp85n10-etched.step` / `wsp85n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsp85n10.step` / `wsp85n10.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603385385342803968) (13 pp, sha256 `68f1f7b95b281650`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wsp85n10-datasheet.pdf)