component

WSP85N10

Public Made by Adom

by adom

Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorswsp85n10factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers wsp85n10: viewers · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago
wsp85n10-etched.glb Publish 0.1.0 · Ray 17d ago
wsp85n10-etched.step wsp85n10: factory component page (healed after the 2026-10-18 wiki outage) · Ray 17d ago
wsp85n10-hero.glb wsp85n10: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
wsp85n10-hero.overlay.json Publish 0.1.0 · Ray 17d ago
wsp85n10.glb Publish 0.1.0 · Ray 17d ago
wsp85n10.kicad_mod Publish 0.1.0 · Ray 17d ago
wsp85n10.kicad_sym Publish 0.1.0 · Ray 17d ago
wsp85n10.lbr Publish 0.1.0 · Ray 17d ago
wsp85n10.step Publish 0.1.0 · Ray 17d ago

WSP85N10

Winsok Semicon · MOSFETs · SOP-8

WSP85N10 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (N-Ch: VDS 100V, ID 4.5A, RDS(ON) 100mΩ at VGS=10V).
2 G1 input Gate of the N-channel MOSFET (VGS max ±20V, threshold 1.2 to 2.5V).
3 S2 passive Source of the P-channel MOSFET (P-Ch: VDS -100V, ID -2.5A, RDS(ON) 150mΩ at VGS=-10V).
4 G2 input Gate of the P-channel MOSFET (VGS max ±20V, threshold -1.3 to -2.3V).
5 D2 passive Drain of the P-channel MOSFET, pins 5 and 6 are tied together (VDS -100V).
6 D2 passive Drain of the P-channel MOSFET, pins 5 and 6 are tied together (VDS -100V).
7 D1 passive Drain of the N-channel MOSFET, pins 7 and 8 are tied together (VDS 100V).
8 D1 passive Drain of the N-channel MOSFET, pins 7 and 8 are tied together (VDS 100V).

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 100 V 1
Drain-Source Voltage (P-Ch) VDS -100 V 1
Gate-Source Voltage (N-Ch) VGS -20 20 V 1
Gate-Source Voltage (P-Ch) VGS -20 20 V 1
Continuous Drain Current (N-Ch) ID 4.5 A VGS(NP)=10V, Tc=25℃ 1
Continuous Drain Current (P-Ch) ID -2.5 A VGS(NP)=10V, Tc=25℃ 1
Continuous Drain Current (N-Ch) ID 2.5 A VGS(NP)=10V, Tc=100℃ 1
Continuous Drain Current (P-Ch) ID -1.4 A VGS(NP)=10V, Tc=100℃ 1
Pulse Drain Current (N-Ch) IDP 10 A Pulse Drain Current Tested, VGS(NP)=10V 1
Pulse Drain Current (P-Ch) IDP -7 A Pulse Drain Current Tested, VGS(NP)=10V 1
Avalanche Current (N-Ch) IAS 3 A Single pulse, L=0.5mH 1
Avalanche Current (P-Ch) IAS -5 A Single pulse, L=0.5mH 1
Avalanche Energy (N-Ch) EAS 6.25 mJ Single pulse, L=0.5mH 1
Avalanche Energy (P-Ch) EAS 12 mJ Single pulse, L=0.5mH 1
Total Power Dissipation PD 2.1 W Ta=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ 150 ℃ 1
Junction to Ambient Thermal Resistance RθJA 60 ℃/W T<10s 1
Junction to Ambient Thermal Resistance RθJA 95 ℃/W Steady State, t=999s, 1in² FR-4 pad, 2oz Cu 1
Drain-Source Breakdown Voltage (N-Ch) BVDSS 100 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance (N-Ch) RDS(ON) 100 110 mΩ VGS=10V, ID=2.5A 2
Static Drain-Source On-Resistance (N-Ch) RDS(ON) 110 150 mΩ VGS=4.5V, ID=2A 2
Gate Threshold Voltage (N-Ch) VGS(th) 1.2 2 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current (N-Ch) IDSS 1 uA VDS=20V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (N-Ch) IDSS 30 uA VDS=20V, VGS=0V, TJ=85℃ 2
Gate-Source Leakage Current (N-Ch) IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance (N-Ch) Rg 2.5 3.6 Ω VDS=0V, VGS=0V, f=1MHz 2
Continuous Source Current (N-Ch) IS 2.5 A VG=VD=0V, Force Current 2
Diode Forward Voltage (N-Ch) VSD 1.3 V VGS=0V, IS=2.5A, TJ=25℃ 2
Drain-Source Breakdown Voltage (P-Ch) BVDSS -100 V VGS=0V, ID=-250uA 3
Static Drain-Source On-Resistance (P-Ch) RDS(ON) 150 180 mΩ VGS=-10V, ID=-1.7A 3
Static Drain-Source On-Resistance (P-Ch) RDS(ON) 170 210 mΩ VGS=-4.5V, ID=-1A 3
Gate Threshold Voltage (P-Ch) VGS(th) -1.3 -1.8 -2.3 V VGS=VDS, ID=-250uA 3
Drain-Source Leakage Current (P-Ch) IDSS -1 uA VDS=-20V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current (P-Ch) IDSS -30 uA VDS=-20V, VGS=0V, TJ=85℃ 3
Gate-Source Leakage Current (P-Ch) IGSS -100 100 nA VGS=±20V, VDS=0V 3
Continuous Source Current (P-Ch) IS -1.7 A VG=VD=0V, Force Current 3
Diode Forward Voltage (P-Ch) VSD -1.2 V VGS=0V, IS=-1.7A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: WSP85N10
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp85n10-etched.step / wsp85n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp85n10.step / wsp85n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (13 pp, sha256 68f1f7b95b281650, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF