component
WSP6956
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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wsp6956: specified limits as data (metadata.characteristics, 36 rows from the datasheet)
2 files changed
+483−1
README.md+43@@ -26,6 +26,49 @@ WSP6956 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted f | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | 60 | V | | 1 |+| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |+| Maximum Junction Temperature | TJ | | | 150 | °C | | 1 |+| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |+| Diode Continuous Forward Current | IS | | | 5 | A | TA=25°C | 1 |+| Continuous Drain Current | ID | | | 10 | A | TA=25°C | 1 |+| Continuous Drain Current | ID | | | 8 | A | TA=70°C | 1 |+| Pulsed Drain Current | IDM | | | 38 | A | TA=25°C | 1 |+| Maximum Power Dissipation | PD | | | 3.5 | W | TA=25°C | 1 |+| Maximum Power Dissipation | PD | | | 2.2 | W | TA=70°C | 1 |+| Avalanche Current, Single pulse | IAS | | | 27 | A | L=0.1mH | 1 |+| Avalanche Energy, Single pulse | EAS | | | 36 | mJ | L=0.1mH | 1 |+| Thermal Resistance Junction to Ambient | RθJA | | | 35 | °C/W | t 10s | 1 |+| Thermal Resistance Junction to Ambient | RθJA | | | 70 | °C/W | Steady state | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, IDS=250µA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=48V, VGS=0V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 30 | µA | TJ=85°C | 2 |+| Gate Threshold Voltage | VGS(th) | | | 2.5 | V | VDS=VGS, IDS=250µA | 2 |+| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |+| Drain-Source On-state Resistance | RDS(ON) | | 15 | 20 | mΩ | VGS=10V, IDS=10A | 2 |+| Drain-Source On-state Resistance | RDS(ON) | | 18 | 24 | mΩ | VGS=4.5V, IDS=9A | 2 |+| Diode Forward Voltage | VSD | | 0.8 | 1.3 | V | ISD=10A, VGS=0V | 2 |+| Input Capacitance | Ciss | | 1370 | 1780 | pF | VGS=0V, VDS=30V, Frequency=1.0MHz | 2 |+| Turn-on Delay Time | td(ON) | | 14 | 26 | ns | VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω | 2 |+| Turn-on Rise Time | tr | | 8 | 15 | ns | VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω | 2 |+| Turn-off Delay Time | td(OFF) | | 38 | 69 | ns | VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω | 2 |+| Turn-off Fall Time | tf | | 12 | 22 | ns | VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω | 2 |+| Total Gate Charge | Qg | | 26 | 37 | nC | VDS=30V, VGS=10V, IDS=10A | 2 |+| Total Gate Charge | Qg | | 12 | | nC | VDS=30V, VGS=4.5V, IDS=10A | 2 |+| Reverse Recovery Time | trr | | 21 | | ns | ISD=10A, dISD/dt=100A/µs | 2 |+| Reverse Recovery Charge | Qrr | | 22 | | nC | | 2 |+| Gate Resistance | RG | | 2.5 | | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |+| Output Capacitance | Coss | | 135 | | pF | | 2 |+| Reverse Transfer Capacitance | Crss | | 60 | | pF | | 2 |+| Gate-Source Charge | Qgs | | 5 | | nC | | 2 |+| Gate-Drain Charge | Qgd | | 5 | | nC | | 2 |+ ## CAD (KiCad official) - Symbol: `WSP6956`
page.json+440−1@@ -177,6 +177,445 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "b71122c5c4a98b46",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Diode Continuous Forward Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 38,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.5,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.2,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current, Single pulse",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 27,+ "conditions": "L=0.1mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy, Single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 36,+ "conditions": "L=0.1mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "t 10s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 70,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, IDS=250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=48V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "TJ=85°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "VDS=VGS, IDS=250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 15,+ "max": 20,+ "conditions": "VGS=10V, IDS=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-state Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 18,+ "max": 24,+ "conditions": "VGS=4.5V, IDS=9A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.3,+ "conditions": "ISD=10A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1370,+ "max": 1780,+ "conditions": "VGS=0V, VDS=30V, Frequency=1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on Delay Time",+ "symbol": "td(ON)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 14,+ "max": 26,+ "conditions": "VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on Rise Time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 8,+ "max": 15,+ "conditions": "VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off Delay Time",+ "symbol": "td(OFF)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 38,+ "max": 69,+ "conditions": "VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off Fall Time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 22,+ "conditions": "VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 26,+ "max": 37,+ "conditions": "VDS=30V, VGS=10V, IDS=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 12,+ "max": null,+ "conditions": "VDS=30V, VGS=4.5V, IDS=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 21,+ "max": null,+ "conditions": "ISD=10A, dISD/dt=100A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 22,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 2.5,+ "max": null,+ "conditions": "VGS=0V, VDS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 135,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 60,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -218,4 +657,4 @@ "visibility": { "public": true }-}+}