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WSP6067A

Public Made by Adom

by adom

Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WSP6067A

Winsok Semicon · MOSFETs · SOP-8

WSP6067A from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (channel 1, 60V, 7A continuous at TC=25C).
2 G1 input Gate of the N-channel MOSFET, rated ±20V gate-source maximum.
3 S2 passive Source of the P-channel MOSFET (channel 2, -60V, -5.0A continuous at TC=25C).
4 G2 input Gate of the P-channel MOSFET, rated ±20V gate-source maximum.
5 D2 passive Drain of the P-channel MOSFET, rated -60V drain-source maximum; tied internally with pin 6.
6 D2 passive Drain of the P-channel MOSFET, rated -60V drain-source maximum; tied internally with pin 5.
7 D1 passive Drain of the N-channel MOSFET, rated 60V drain-source maximum; tied internally with pin 8.
8 D1 passive Drain of the N-channel MOSFET, rated 60V drain-source maximum; tied internally with pin 7.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-Source Voltage VDS 60 V 1
P-ch Drain-Source Voltage VDS -60 V 1
N-ch Gate-Source Voltage VGS -20 20 V 1
P-ch Gate-Source Voltage VGS -20 20 V 1
N-ch Continuous Drain Current ID 7 A TC=25℃, VGS @ 10V 1
P-ch Continuous Drain Current ID -5 A TC=25℃, VGS @ 10V 1
N-ch Continuous Drain Current ID 4 A TC=100℃, VGS @ 10V 1
P-ch Continuous Drain Current ID -2.5 A TC=100℃, VGS @ 10V 1
N-ch Pulsed Drain Current IDM 28 A 1
P-ch Pulsed Drain Current IDM -20 A 1
N-ch Single Pulse Avalanche Energy EAS 22 mJ 1
P-ch Single Pulse Avalanche Energy EAS 28 mJ 1
N-ch Avalanche Current IAS 21 A 1
P-ch Avalanche Current IAS -24 A 1
Total Power Dissipation (N-ch and P-ch) PD 2 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W 1
Thermal Resistance Junction-Case RθJC 62.5 ℃/W 1
N-ch Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V , ID=250uA 2
N-ch Static Drain-Source On-Resistance RDS(ON) 38 52 mΩ VGS=10V , ID=5A 2
N-ch Static Drain-Source On-Resistance RDS(ON) 55 75 mΩ VGS=4.5V , ID=4A 2
N-ch Gate Threshold Voltage VGS(th) 1 2 3 V VGS=VDS , ID =250uA 2
N-ch Drain-Source Leakage Current IDSS 1 uA VDS=48V , VGS=0V , TJ=25℃ 2
N-ch Drain-Source Leakage Current IDSS 5 uA VDS=48V , VGS=0V , TJ=55℃ 2
N-ch Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
N-ch Gate Resistance Rg 2.8 4.3 Ω VDS=0V , VGS=0V , f=1MHz 2
N-ch Total Gate Charge (4.5V) Qg 19 25 nC VDS=48V , VGS=4.5V , ID=4A 2
N-ch Single Pulse Avalanche Energy EAS 12 mJ VDD=25V , L=0.1mH , IAS=22A 2
N-ch Continuous Source Current IS 2.5 A 2
N-ch Pulsed Source Current ISM 24 A VG=VD=0V , Force Current 2
N-ch Diode Forward Voltage VSD 1.3 V VGS=0V , IS=1A,TJ=25℃ 2
P-ch Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V , ID=-250uA 3
P-ch Static Drain-Source On-Resistance RDS(ON) 80 100 mΩ VGS=-10V , ID=-3A 3
P-ch Static Drain-Source On-Resistance RDS(ON) 100 115 mΩ VGS=-4.5V , ID=-2A 3
P-ch Gate Threshold Voltage VGS(th) -1.2 -1.75 -2.5 V VGS=VDS , ID =-250uA 3
P-ch Drain-Source Leakage Current IDSS 1 uA VDS=-48V , VGS=0V , TJ=25℃ 3
P-ch Drain-Source Leakage Current IDSS 5 uA VDS=-48V , VGS=0V , TJ=55℃ 3
P-ch Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 3
P-ch Gate Resistance Rg 1.5 2.7 Ω VDS=0V , VGS=0V , f=1MHz 3
P-ch Single Pulse Avalanche Energy EAS 13 mJ VDD=-25V , L=0.1mH , IAS=-24A 3
P-ch Continuous Source Current IS -2.5 A 3
P-ch Pulsed Source Current ISM -10 A VG=VD=0V , Force Current 3
P-ch Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A , TJ=25℃ 3
N-ch BVDSS Temperature Coefficient △BVDSS/△TJ 0.063 V/℃ Reference to 25℃ , ID=1mA 2
N-ch VGS(th) Temperature Coefficient △VGS(th) -5.24 mV/℃ VGS=VDS , ID =250uA 2
P-ch BVDSS Temperature Coefficient △BVDSS/△TJ -0.03 V/℃ Reference to 25℃ , ID=-1mA 3
P-ch VGS(th) Temperature Coefficient △VGS(th) 4.56 mV/℃ VGS=VDS , ID =-250uA 3

CAD (KiCad official)

  • Symbol: WSP6067A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp6067a-etched.step / wsp6067a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp6067a.step / wsp6067a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (8 pp, sha256 5bb71aa8e8f3a8fe, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF