Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

main

Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	Publish 0.1.0 · Ray	10d ago
viewers	wsp6067a: viewers · Ray	10d ago
package.json	Publish 0.1.0 · Ray	10d ago
page.json	Set visibility: public · Ray	10d ago
README.md	Publish 0.1.0 · Ray	10d ago
wsp6067a-etched.glb	Publish 0.1.0 · Ray	10d ago
wsp6067a-etched.step	wsp6067a: factory component page (tier=lcsc) · Ray	10d ago
wsp6067a-hero.glb	wsp6067a: hero GLB from the etched model (keeps the MPN mark) · Ray	10d ago
wsp6067a-hero.overlay.json	Publish 0.1.0 · Ray	10d ago
wsp6067a.glb	Publish 0.1.0 · Ray	10d ago
wsp6067a.kicad_mod	Publish 0.1.0 · Ray	10d ago
wsp6067a.kicad_sym	Publish 0.1.0 · Ray	10d ago
wsp6067a.lbr	Publish 0.1.0 · Ray	10d ago
wsp6067a.step	Publish 0.1.0 · Ray	10d ago

WSP6067A

Winsok Semicon · MOSFETs · SOP-8

WSP6067A from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source of the N-channel MOSFET (channel 1, 60V, 7A continuous at TC=25C).
2	G1	input	Gate of the N-channel MOSFET, rated ±20V gate-source maximum.
3	S2	passive	Source of the P-channel MOSFET (channel 2, -60V, -5.0A continuous at TC=25C).
4	G2	input	Gate of the P-channel MOSFET, rated ±20V gate-source maximum.
5	D2	passive	Drain of the P-channel MOSFET, rated -60V drain-source maximum; tied internally with pin 6.
6	D2	passive	Drain of the P-channel MOSFET, rated -60V drain-source maximum; tied internally with pin 5.
7	D1	passive	Drain of the N-channel MOSFET, rated 60V drain-source maximum; tied internally with pin 8.
8	D1	passive	Drain of the N-channel MOSFET, rated 60V drain-source maximum; tied internally with pin 7.

Key specifications

Parameter	Value
Manufacturer	Winsok Semicon
Package	SOP-8
Category	Triode/MOS Tube/Transistor
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
N-ch Drain-Source Voltage	VDS			60	V		1
P-ch Drain-Source Voltage	VDS			-60	V		1
N-ch Gate-Source Voltage	VGS	-20		20	V		1
P-ch Gate-Source Voltage	VGS	-20		20	V		1
N-ch Continuous Drain Current	ID			7	A	TC=25℃, VGS @ 10V	1
P-ch Continuous Drain Current	ID			-5	A	TC=25℃, VGS @ 10V	1
N-ch Continuous Drain Current	ID			4	A	TC=100℃, VGS @ 10V	1
P-ch Continuous Drain Current	ID			-2.5	A	TC=100℃, VGS @ 10V	1
N-ch Pulsed Drain Current	IDM			28	A		1
P-ch Pulsed Drain Current	IDM			-20	A		1
N-ch Single Pulse Avalanche Energy	EAS			22	mJ		1
P-ch Single Pulse Avalanche Energy	EAS			28	mJ		1
N-ch Avalanche Current	IAS			21	A		1
P-ch Avalanche Current	IAS			-24	A		1
Total Power Dissipation (N-ch and P-ch)	PD			2	W	TC=25℃	1
Storage Temperature Range	TSTG	-55		150	℃		1
Operating Junction Temperature Range	TJ	-55		150	℃		1
Thermal Resistance Junction-Ambient	RθJA			85	℃/W		1
Thermal Resistance Junction-Case	RθJC			62.5	℃/W		1
N-ch Drain-Source Breakdown Voltage	BVDSS	60			V	VGS=0V , ID=250uA	2
N-ch Static Drain-Source On-Resistance	RDS(ON)		38	52	mΩ	VGS=10V , ID=5A	2
N-ch Static Drain-Source On-Resistance	RDS(ON)		55	75	mΩ	VGS=4.5V , ID=4A	2
N-ch Gate Threshold Voltage	VGS(th)	1	2	3	V	VGS=VDS , ID =250uA	2
N-ch Drain-Source Leakage Current	IDSS			1	uA	VDS=48V , VGS=0V , TJ=25℃	2
N-ch Drain-Source Leakage Current	IDSS			5	uA	VDS=48V , VGS=0V , TJ=55℃	2
N-ch Gate-Source Leakage Current	IGSS	-100		100	nA	VGS=±20V , VDS=0V	2
N-ch Gate Resistance	Rg		2.8	4.3	Ω	VDS=0V , VGS=0V , f=1MHz	2
N-ch Total Gate Charge (4.5V)	Qg		19	25	nC	VDS=48V , VGS=4.5V , ID=4A	2
N-ch Single Pulse Avalanche Energy	EAS	12			mJ	VDD=25V , L=0.1mH , IAS=22A	2
N-ch Continuous Source Current	IS			2.5	A		2
N-ch Pulsed Source Current	ISM			24	A	VG=VD=0V , Force Current	2
N-ch Diode Forward Voltage	VSD			1.3	V	VGS=0V , IS=1A,TJ=25℃	2
P-ch Drain-Source Breakdown Voltage	BVDSS	-60			V	VGS=0V , ID=-250uA	3
P-ch Static Drain-Source On-Resistance	RDS(ON)		80	100	mΩ	VGS=-10V , ID=-3A	3
P-ch Static Drain-Source On-Resistance	RDS(ON)		100	115	mΩ	VGS=-4.5V , ID=-2A	3
P-ch Gate Threshold Voltage	VGS(th)	-1.2	-1.75	-2.5	V	VGS=VDS , ID =-250uA	3
P-ch Drain-Source Leakage Current	IDSS			1	uA	VDS=-48V , VGS=0V , TJ=25℃	3
P-ch Drain-Source Leakage Current	IDSS			5	uA	VDS=-48V , VGS=0V , TJ=55℃	3
P-ch Gate-Source Leakage Current	IGSS	-100		100	nA	VGS=±20V , VDS=0V	3
P-ch Gate Resistance	Rg		1.5	2.7	Ω	VDS=0V , VGS=0V , f=1MHz	3
P-ch Single Pulse Avalanche Energy	EAS	13			mJ	VDD=-25V , L=0.1mH , IAS=-24A	3
P-ch Continuous Source Current	IS			-2.5	A		3
P-ch Pulsed Source Current	ISM			-10	A	VG=VD=0V , Force Current	3
P-ch Diode Forward Voltage	VSD			-1.2	V	VGS=0V , IS=-1A , TJ=25℃	3
N-ch BVDSS Temperature Coefficient	△BVDSS/△TJ		0.063		V/℃	Reference to 25℃ , ID=1mA	2
N-ch VGS(th) Temperature Coefficient	△VGS(th)		-5.24		mV/℃	VGS=VDS , ID =250uA	2
P-ch BVDSS Temperature Coefficient	△BVDSS/△TJ		-0.03		V/℃	Reference to 25℃ , ID=-1mA	3
P-ch VGS(th) Temperature Coefficient	△VGS(th)		4.56		mV/℃	VGS=VDS , ID =-250uA	3

CAD (KiCad official)

Symbol: WSP6067A
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SOP-8 (KiCad packages3D, STEP)
3D model files: wsp6067a-etched.step / wsp6067a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp6067a.step / wsp6067a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Winsok Semicon datasheet (8 pp, sha256 5bb71aa8e8f3a8fe, retrieved 2026-10-22, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF