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WSP4409A
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Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSP4409A
Winsok Semicon · MOSFETs · SOP-8
WSP4409A from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied internally with pins 2 and 3; continuous drain current is -15 A at Tc=25℃ (ID rating applies to the device as a whole). |
| 2 | S | passive | Source of the P-channel MOSFET, tied internally with pins 1 and 3; drain-source voltage rating is -30 V. |
| 3 | S | passive | Source of the P-channel MOSFET, tied internally with pins 1 and 2; gate-source voltage is limited to ±20 V. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to ±20 V with a threshold of -1.0 to -2.7 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied internally with pins 6, 7 and 8; VDS rating is -30 V and pulsed drain current is -70 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied internally with pins 5, 7 and 8; RDS(ON) is 8 mΩ typ. (10 mΩ max.) at VGS=-10 V, ID=-15 A. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 8; continuous drain current is -15 A at Tc=25℃. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 7; total power dissipation is 2.5 W at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current @ Tc=25℃ | ID@Tc=25℃ | -15 | A | VGS @ -10V | 1 | ||
| Continuous Drain Current @ Tc=70℃ | ID@Tc=70℃ | -10 | A | VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -70 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 70 | mJ | 1 | |||
| Avalanche Current | IAS | -38 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2.5 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62.5 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 24 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 8 | 10 | mΩ | VGS=-10V, ID=-15A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 10 | 14 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -2.7 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Single Pulse Avalanche Energy | EAS | 30 | mJ | VDD=-25V, L=0.5mH, IAS=-38A | 2 | ||
| Continuous Source Current | IS | -4 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -70 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.3 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSP4409A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
wsp4409a-etched.step/wsp4409a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsp4409a.step/wsp4409a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
fed9dd7972f4df5d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSP4409A
**Winsok Semicon** · MOSFETs · SOP-8
WSP4409A from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied internally with pins 2 and 3; continuous drain current is -15 A at Tc=25℃ (ID rating applies to the device as a whole). |
| 2 | S | passive | Source of the P-channel MOSFET, tied internally with pins 1 and 3; drain-source voltage rating is -30 V. |
| 3 | S | passive | Source of the P-channel MOSFET, tied internally with pins 1 and 2; gate-source voltage is limited to ±20 V. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to ±20 V with a threshold of -1.0 to -2.7 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied internally with pins 6, 7 and 8; VDS rating is -30 V and pulsed drain current is -70 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied internally with pins 5, 7 and 8; RDS(ON) is 8 mΩ typ. (10 mΩ max.) at VGS=-10 V, ID=-15 A. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 8; continuous drain current is -15 A at Tc=25℃. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 7; total power dissipation is 2.5 W at TA=25℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current @ Tc=25℃ | ID@Tc=25℃ | -15 | | | A | VGS @ -10V | 1 |
| Continuous Drain Current @ Tc=70℃ | ID@Tc=70℃ | -10 | | | A | VGS @ -10V | 1 |
| Pulsed Drain Current | IDM | -70 | | | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 70 | mJ | | 1 |
| Avalanche Current | IAS | -38 | | | A | | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 2.5 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62.5 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 24 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 8 | 10 | mΩ | VGS=-10V, ID=-15A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 10 | 14 | mΩ | VGS=-4.5V, ID=-10A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -2.7 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Single Pulse Avalanche Energy | EAS | 30 | | | mJ | VDD=-25V, L=0.5mH, IAS=-38A | 2 |
| Continuous Source Current | IS | | | -4 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -70 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1.3 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `WSP4409A`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `wsp4409a-etched.step` / `wsp4409a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsp4409a.step` / `wsp4409a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588944186209288192) (5 pp, sha256 `fed9dd7972f4df5d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsp4409a-datasheet.pdf)