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WSP4409A

Public Made by Adom

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Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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WSP4409A

Winsok Semicon · MOSFETs · SOP-8

WSP4409A from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied internally with pins 2 and 3; continuous drain current is -15 A at Tc=25℃ (ID rating applies to the device as a whole).
2 S passive Source of the P-channel MOSFET, tied internally with pins 1 and 3; drain-source voltage rating is -30 V.
3 S passive Source of the P-channel MOSFET, tied internally with pins 1 and 2; gate-source voltage is limited to ±20 V.
4 G input Gate of the P-channel MOSFET; gate-source voltage is limited to ±20 V with a threshold of -1.0 to -2.7 V.
5 D passive Drain of the P-channel MOSFET, tied internally with pins 6, 7 and 8; VDS rating is -30 V and pulsed drain current is -70 A.
6 D passive Drain of the P-channel MOSFET, tied internally with pins 5, 7 and 8; RDS(ON) is 8 mΩ typ. (10 mΩ max.) at VGS=-10 V, ID=-15 A.
7 D passive Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 8; continuous drain current is -15 A at Tc=25℃.
8 D passive Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 7; total power dissipation is 2.5 W at TA=25℃.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current @ Tc=25℃ ID@Tc=25℃ -15 A VGS @ -10V 1
Continuous Drain Current @ Tc=70℃ ID@Tc=70℃ -10 A VGS @ -10V 1
Pulsed Drain Current IDM -70 A 1
Single Pulse Avalanche Energy EAS 70 mJ 1
Avalanche Current IAS -38 A 1
Total Power Dissipation PD@TA=25℃ 2.5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62.5 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec 1
Thermal Resistance Junction-Case RθJC 24 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 8 10 mΩ VGS=-10V, ID=-15A 2
Static Drain-Source On-Resistance RDS(ON) 10 14 mΩ VGS=-4.5V, ID=-10A 2
Gate Threshold Voltage VGS(th) -1 -2.7 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Single Pulse Avalanche Energy EAS 30 mJ VDD=-25V, L=0.5mH, IAS=-38A 2
Continuous Source Current IS -4 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -70 A 2
Diode Forward Voltage VSD -1.3 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSP4409A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp4409a-etched.step / wsp4409a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp4409a.step / wsp4409a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 fed9dd7972f4df5d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF