# WSP16N10

**Winsok Semicon** · MOSFETs · SOP-8

WSP16N10 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, with continuous source (body-diode) current of 4 A max. |
| 2 | S | passive | Source of the N-channel MOSFET, with continuous source (body-diode) current of 4 A max. |
| 3 | S | passive | Source of the N-channel MOSFET, with continuous source (body-diode) current of 4 A max. |
| 4 | G | input | Gate of the N-channel MOSFET, rated for VGS of ±20 V max with a threshold of 1.4 V min to 2.5 V max. |
| 5 | D | passive | Drain of the N-channel MOSFET, rated for VDS of 100 V max and 16 A continuous at TC=25℃. |
| 6 | D | passive | Drain of the N-channel MOSFET, rated for VDS of 100 V max and 16 A continuous at TC=25℃. |
| 7 | D | passive | Drain of the N-channel MOSFET, rated for VDS of 100 V max and 16 A continuous at TC=25℃. |
| 8 | D | passive | Drain of the N-channel MOSFET, rated for VDS of 100 V max and 16 A continuous at TC=25℃. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 16 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 10 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 56 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 30 | mJ | L=0.1mH | 1 |
| Avalanche Current | IAS |  |  | 28 | A |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 3.1 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 40 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 24 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V, ID=250uA | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ |  | 0.098 |  | V/℃ | Reference to 25℃, ID=1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 8.9 | 11 | mΩ | VGS=10V, ID=11.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 9.9 | 13 | mΩ | VGS=4.5V, ID=9.5A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.4 | 1.7 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) |  | -5.52 |  | mV/℃ |  | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=100V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=100V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Resistance | Rg |  | 0.55 | 1 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg |  | 15 |  | nC | VDS=50V, VGS=10V, ID=11.5A | 2 |
| Gate-Source Charge | Qgs |  | 7 |  | nC | VDS=50V, VGS=10V, ID=11.5A | 2 |
| Gate-Drain Charge | Qgd |  | 4 |  | nC | VDS=50V, VGS=10V, ID=11.5A | 2 |
| Turn-On Delay Time | Td(on) |  | 8 |  | ns | VDD=50V, VGEN=10V, RG=3Ω ID=1A, RL=4.35Ω | 2 |
| Rise Time | Tr |  | 3 |  | ns | VDD=50V, VGEN=10V, RG=3Ω ID=1A, RL=4.35Ω | 2 |
| Turn-Off Delay Time | Td(off) |  | 25 |  | ns | VDD=50V, VGEN=10V, RG=3Ω ID=1A, RL=4.35Ω | 2 |
| Fall Time | Tf |  | 4 |  | ns | VDD=50V, VGEN=10V, RG=3Ω ID=1A, RL=4.35Ω | 2 |
| Input Capacitance | Ciss |  | 4000 |  | pF | VDS=50V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 898 |  | pF | VDS=50V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 39 |  | pF | VDS=50V, VGS=0V, f=1MHz | 2 |
| Single Pulse Avalanche Energy | EAS | 18 |  |  | mJ | VDD=50V, L=0.1mH, IAS=10A | 2 |
| Continuous Source Current | IS |  |  | 4 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 16 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.1 | V | VGS=0V, IS=6A, TJ=25℃ | 2 |
| Reverse Recovery Time | trr |  | 25 |  | nS | IF=1A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr |  | 110 |  | nC |  | 2 |

## CAD (KiCad official)

- Symbol: `WSP16N10`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `wsp16n10-etched.step` / `wsp16n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsp16n10.step` / `wsp16n10.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588881128980037632) (5 pp, sha256 `9959964d89ac3600`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wsp16n10-datasheet.pdf)