component
WSP16N10
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownWSP16N10
Winsok Semicon · MOSFETs · SOP-8
WSP16N10 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, with continuous source (body-diode) current of 4 A max. |
| 2 | S | passive | Source of the N-channel MOSFET, with continuous source (body-diode) current of 4 A max. |
| 3 | S | passive | Source of the N-channel MOSFET, with continuous source (body-diode) current of 4 A max. |
| 4 | G | input | Gate of the N-channel MOSFET, rated for VGS of ±20 V max with a threshold of 1.4 V min to 2.5 V max. |
| 5 | D | passive | Drain of the N-channel MOSFET, rated for VDS of 100 V max and 16 A continuous at TC=25℃. |
| 6 | D | passive | Drain of the N-channel MOSFET, rated for VDS of 100 V max and 16 A continuous at TC=25℃. |
| 7 | D | passive | Drain of the N-channel MOSFET, rated for VDS of 100 V max and 16 A continuous at TC=25℃. |
| 8 | D | passive | Drain of the N-channel MOSFET, rated for VDS of 100 V max and 16 A continuous at TC=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 16 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 10 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 56 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 30 | mJ | L=0.1mH | 1 | ||
| Avalanche Current | IAS | 28 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 3.1 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 40 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 24 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.098 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 8.9 | 11 | mΩ | VGS=10V, ID=11.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 9.9 | 13 | mΩ | VGS=4.5V, ID=9.5A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.4 | 1.7 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | -5.52 | mV/℃ | 2 | |||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=100V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=100V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 0.55 | 1 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Total Gate Charge (10V) | Qg | 15 | nC | VDS=50V, VGS=10V, ID=11.5A | 2 | ||
| Gate-Source Charge | Qgs | 7 | nC | VDS=50V, VGS=10V, ID=11.5A | 2 | ||
| Gate-Drain Charge | Qgd | 4 | nC | VDS=50V, VGS=10V, ID=11.5A | 2 | ||
| Turn-On Delay Time | Td(on) | 8 | ns | VDD=50V, VGEN=10V, RG=3Ω ID=1A, RL=4.35Ω | 2 | ||
| Rise Time | Tr | 3 | ns | VDD=50V, VGEN=10V, RG=3Ω ID=1A, RL=4.35Ω | 2 | ||
| Turn-Off Delay Time | Td(off) | 25 | ns | VDD=50V, VGEN=10V, RG=3Ω ID=1A, RL=4.35Ω | 2 | ||
| Fall Time | Tf | 4 | ns | VDD=50V, VGEN=10V, RG=3Ω ID=1A, RL=4.35Ω | 2 | ||
| Input Capacitance | Ciss | 4000 | pF | VDS=50V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 898 | pF | VDS=50V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 39 | pF | VDS=50V, VGS=0V, f=1MHz | 2 | ||
| Single Pulse Avalanche Energy | EAS | 18 | mJ | VDD=50V, L=0.1mH, IAS=10A | 2 | ||
| Continuous Source Current | IS | 4 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 16 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.1 | V | VGS=0V, IS=6A, TJ=25℃ | 2 | ||
| Reverse Recovery Time | trr | 25 | nS | IF=1A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 110 | nC | 2 |
CAD (KiCad official)
- Symbol:
WSP16N10 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
wsp16n10-etched.step/wsp16n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsp16n10.step/wsp16n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
9959964d89ac3600, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).