component
WSP14N10
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSP14N10
Winsok Semicon · MOSFETs · SOP-8
WSP14N10 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3; continuous drain current is rated 14 A at TC=25°C. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET, with a gate-source voltage rating of ±20 V and a threshold of 1.0 to 2.5 V. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied with pins 6 to 8; drain-source voltage rating is 100 V. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied with pins 5 to 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 14 | A | ID@TC=25℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 42 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 30 | mJ | L=0.1mH | 1 | ||
| Total Power Dissipation | PD | 72 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 40 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 24 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 16 | 20 | mΩ | VGS=10V, ID=8A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 25 | 28 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=100V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=100V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 0.55 | 1 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 40 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | VGS=0V, IS=8A, TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | ΔBVDSS/ΔTJ | 0.098 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th) | -5.52 | mV/℃ | 2 | |||
| Total Gate Charge (10V) | Qg | 19.8 | nC | VDS=50V, VGS=10V, ID=8A | 2 | ||
| Gate-Source Charge | Qgs | 2.4 | nC | VDS=50V, VGS=10V, ID=8A | 2 | ||
| Gate-Drain Charge | Qgd | 5.3 | nC | VDS=50V, VGS=10V, ID=8A | 2 | ||
| Turn-On Delay Time | Td(on) | 17.8 | ns | VDD=50V, VGS=10V, RG=2.2Ω, ID=10A | 2 | ||
| Rise Time | Tr | 3.9 | ns | VDD=50V, VGS=10V, RG=2.2Ω, ID=10A | 2 | ||
| Turn-Off Delay Time | Td(off) | 33.5 | ns | VDD=50V, VGS=10V, RG=2.2Ω, ID=10A | 2 | ||
| Fall Time | Tf | 3.2 | ns | VDD=50V, VGS=10V, RG=2.2Ω, ID=10A | 2 | ||
| Input Capacitance | Ciss | 1191 | pF | VDS=50V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 195 | pF | VDS=50V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 41 | pF | VDS=50V, VGS=0V, f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 50 | nS | IF=8A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 95 | nC | IF=8A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSP14N10 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
wsp14n10-etched.step/wsp14n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsp14n10.step/wsp14n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (6 pp, sha256
22603661cc29c575, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSP14N10
**Winsok Semicon** · MOSFETs · SOP-8
WSP14N10 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3; continuous drain current is rated 14 A at TC=25°C. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET, with a gate-source voltage rating of ±20 V and a threshold of 1.0 to 2.5 V. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied with pins 6 to 8; drain-source voltage rating is 100 V. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied with pins 5 to 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 14 | A | ID@TC=25℃, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 42 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 30 | mJ | L=0.1mH | 1 |
| Total Power Dissipation | PD | | | 72 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 40 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 24 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 16 | 20 | mΩ | VGS=10V, ID=8A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 25 | 28 | mΩ | VGS=4.5V, ID=6A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=100V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=100V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Resistance | Rg | | 0.55 | 1 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS | | | 40 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | VGS=0V, IS=8A, TJ=25℃ | 2 |
| BVDSS Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.098 | | V/℃ | Reference to 25℃, ID=1mA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th) | | -5.52 | | mV/℃ | | 2 |
| Total Gate Charge (10V) | Qg | | 19.8 | | nC | VDS=50V, VGS=10V, ID=8A | 2 |
| Gate-Source Charge | Qgs | | 2.4 | | nC | VDS=50V, VGS=10V, ID=8A | 2 |
| Gate-Drain Charge | Qgd | | 5.3 | | nC | VDS=50V, VGS=10V, ID=8A | 2 |
| Turn-On Delay Time | Td(on) | | 17.8 | | ns | VDD=50V, VGS=10V, RG=2.2Ω, ID=10A | 2 |
| Rise Time | Tr | | 3.9 | | ns | VDD=50V, VGS=10V, RG=2.2Ω, ID=10A | 2 |
| Turn-Off Delay Time | Td(off) | | 33.5 | | ns | VDD=50V, VGS=10V, RG=2.2Ω, ID=10A | 2 |
| Fall Time | Tf | | 3.2 | | ns | VDD=50V, VGS=10V, RG=2.2Ω, ID=10A | 2 |
| Input Capacitance | Ciss | | 1191 | | pF | VDS=50V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 195 | | pF | VDS=50V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 41 | | pF | VDS=50V, VGS=0V, f=1MHz | 2 |
| Reverse Recovery Time | trr | | 50 | | nS | IF=8A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | | 95 | | nC | IF=8A, dI/dt=100A/µs, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `WSP14N10`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `wsp14n10-etched.step` / `wsp14n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsp14n10.step` / `wsp14n10.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588917113142579200) (6 pp, sha256 `22603661cc29c575`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsp14n10-datasheet.pdf)