component
WSK42P10
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Winsok Semicon MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSK42P10
Winsok Semicon · MOSFETs · TO-263-2L
WSK42P10 from Winsok Semicon, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; the gate-source voltage is rated ±20 V. |
| 2 | D | passive | Drain of the P-channel MOSFET; the drain-source voltage is rated -100 V and continuous drain current is -42 A at TC=25℃. |
| 3 | S | passive | Source of the P-channel MOSFET; the continuous source (body diode) current is limited to -18 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-263-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -42 | A | TC=25℃, -VGS @ -10V | 1 | ||
| Continuous Drain Current | ID | -19 | A | TC=100℃, -VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -75 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 89 | mJ | Rating; test VDD=-25V, VGS=-10V, L=0.5mH, IAS=-18.9A | 1 | ||
| Avalanche Current | IAS | -18.9 | A | 1 | |||
| Total Power Dissipation | PD | 54 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t≤10 s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.3 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t≤10 s | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 78 | 95 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.7 | -2.5 | V | 2 | |
| VGS(th) Temperature Coefficient | ΔVGS(th) | 4.08 | mV/℃ | VGS=VDS, ID=-250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Single Pulse Avalanche Energy (guaranteed) | EAS | 100 | mJ | VDD=-25V, L=0.5mH, IAS=-10A | 2 | ||
| Continuous Source Current | IS | -18 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSK42P10 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files:
wsk42p10-etched.step/wsk42p10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsk42p10.step/wsk42p10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (6 pp, sha256
9c1576cdb56453d9, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSK42P10
**Winsok Semicon** · MOSFETs · TO-263-2L
WSK42P10 from Winsok Semicon, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; the gate-source voltage is rated ±20 V. |
| 2 | D | passive | Drain of the P-channel MOSFET; the drain-source voltage is rated -100 V and continuous drain current is -42 A at TC=25℃. |
| 3 | S | passive | Source of the P-channel MOSFET; the continuous source (body diode) current is limited to -18 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-263-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -42 | | | A | TC=25℃, -VGS @ -10V | 1 |
| Continuous Drain Current | ID | -19 | | | A | TC=100℃, -VGS @ -10V | 1 |
| Pulsed Drain Current | IDM | -75 | | | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 89 | mJ | Rating; test VDD=-25V, VGS=-10V, L=0.5mH, IAS=-18.9A | 1 |
| Avalanche Current | IAS | -18.9 | | | A | | 1 |
| Total Power Dissipation | PD | | | 54 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t≤10 s | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 2.3 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t≤10 s | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -100 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 78 | 95 | mΩ | VGS=-10V, ID=-10A | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.7 | -2.5 | V | | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th) | | | 4.08 | mV/℃ | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Single Pulse Avalanche Energy (guaranteed) | EAS | 100 | | | mJ | VDD=-25V, L=0.5mH, IAS=-10A | 2 |
| Continuous Source Current | IS | | | -18 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `WSK42P10`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files: `wsk42p10-etched.step` / `wsk42p10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsk42p10.step` / `wsk42p10.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603382845486616576) (6 pp, sha256 `9c1576cdb56453d9`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsk42p10-datasheet.pdf)