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WSK42P10

Public Made by Adom

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Winsok Semicon MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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WSK42P10

Winsok Semicon · MOSFETs · TO-263-2L

WSK42P10 from Winsok Semicon, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; the gate-source voltage is rated ±20 V.
2 D passive Drain of the P-channel MOSFET; the drain-source voltage is rated -100 V and continuous drain current is -42 A at TC=25℃.
3 S passive Source of the P-channel MOSFET; the continuous source (body diode) current is limited to -18 A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-263-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -42 A TC=25℃, -VGS @ -10V 1
Continuous Drain Current ID -19 A TC=100℃, -VGS @ -10V 1
Pulsed Drain Current IDM -75 A 1
Single Pulse Avalanche Energy EAS 89 mJ Rating; test VDD=-25V, VGS=-10V, L=0.5mH, IAS=-18.9A 1
Avalanche Current IAS -18.9 A 1
Total Power Dissipation PD 54 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t≤10 s 1
Thermal Resistance Junction-Case RθJC 2.3 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t≤10 s 1
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 78 95 mΩ VGS=-10V, ID=-10A 2
Gate Threshold Voltage VGS(th) -1.2 -1.7 -2.5 V 2
VGS(th) Temperature Coefficient ΔVGS(th) 4.08 mV/℃ VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=-48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Single Pulse Avalanche Energy (guaranteed) EAS 100 mJ VDD=-25V, L=0.5mH, IAS=-10A 2
Continuous Source Current IS -18 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSK42P10
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: wsk42p10-etched.step / wsk42p10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsk42p10.step / wsk42p10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (6 pp, sha256 9c1576cdb56453d9, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF