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WSK280N06G6
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Winsok Semicon MOSFETs, TO-263-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSK280N06G6
Winsok Semicon · MOSFETs · TO-263-6L
WSK280N06G6 from Winsok Semicon, in a TO-263-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20V with threshold VGS(th) of 2.0V min to 4.0V max at ID=250μA. |
| 2 | S | passive | Source, tied with pins 3, 5, 6 and 7; shared continuous current rating is 280A at TC=25°C. |
| 3 | S | passive | Source, tied with pins 2, 5, 6 and 7; shared continuous current rating is 280A at TC=25°C. |
| 4 | D | passive | Drain; drain-source voltage rating is 60V with RDS(ON) of 2.1mΩ typ and 3.2mΩ max at VGS=10V, ID=20A. |
| 5 | S | passive | Source, tied with pins 2, 3, 6 and 7; shared continuous current rating is 280A at TC=25°C. |
| 6 | S | passive | Source, tied with pins 2, 3, 5 and 7; shared continuous current rating is 280A at TC=25°C. |
| 7 | S | passive | Source, listed as pin 7 in the pin configuration and tied with pins 2, 3, 5 and 6; shared continuous current rating is 280A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-263-6L |
| Category | Transistors/Thyristors |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | TC=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25°C | 1 | |
| Continuous Drain Current | ID@TC=25°C | 280 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID@TC=100°C | 248 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 240 | A | TC=25°C | 1 | ||
| Single Pulse Avalanche Energy | EAS | 101 | mJ | TC=25°C | 1 | ||
| Avalanche Current | IAS | 55 | A | TC=25°C | 1 | ||
| Total Power Dissipation | PD@TC=25°C | 168 | W | TC=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 0.89 | °C/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 1.5 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V , ID=250μA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 2.1 | 3.2 | mΩ | VGS=10V , ID=20A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 2.8 | 4 | V | VGS=VDS , ID=250μA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=60V , VGS=0V , TJ=25°C | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | μA | VDS=60V , VGS=0V , TJ=100°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 125 | A | TC=25°C | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | IS=20A , VGS=0V | 2 | ||
| Forward Transconductance | gfs | 78 | S | VDS=5V , ID=20A | 2 | ||
| Gate Resistance | Rg | 2.2 | Ω | ƒ=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 72.5 | nC | VDS=30V , VGS=10V , ID=20A | 2 | ||
| Gate-Source Charge | Qgs | 19.5 | nC | VDS=30V , VGS=10V , ID=20A | 2 | ||
| Gate-Drain Charge | Qgd | 14 | nC | VDS=30V , VGS=10V , ID=20A | 2 | ||
| Turn-on Delay Time | Td(on) | 26.5 | ns | VDD=30V , VGS=10V , RG=3Ω , ID=20A | 2 | ||
| Rise Time | Tr | 15 | ns | VDD=30V , VGS=10V , RG=3Ω , ID=20A | 2 | ||
| Turn-off Delay Time | Td(off) | 73 | ns | VDD=30V , VGS=10V , RG=3Ω , ID=20A | 2 | ||
| Fall Time | Tf | 18 | ns | VDD=30V , VGS=10V , RG=3Ω , ID=20A | 2 | ||
| Input Capacitance | Ciss | 5245 | pF | VDS=30V , VGS=0V , ƒ=1.0MHz | 2 | ||
| Output Capacitance | Coss | 1090 | pF | VDS=30V , VGS=0V , ƒ=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 25 | pF | VDS=30V , VGS=0V , ƒ=1.0MHz | 2 | ||
| Reverse Recovery Time | trr | 25 | ns | IF=20A , di/dt=100A/µs | 2 | ||
| Reverse Recovery Charge | Qrr | 90 | nC | IF=20A , di/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
WSK280N06G6 - Footprint:
Package_TO_SOT_SMD:TO-263-6 - 3D model: TO-263-6L (KiCad packages3D, STEP)
- 3D model files:
wsk280n06g6-etched.step/wsk280n06g6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsk280n06g6.step/wsk280n06g6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (6 pp, sha256
8861cf7a2e349a27, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSK280N06G6
**Winsok Semicon** · MOSFETs · TO-263-6L
WSK280N06G6 from Winsok Semicon, in a TO-263-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20V with threshold VGS(th) of 2.0V min to 4.0V max at ID=250μA. |
| 2 | S | passive | Source, tied with pins 3, 5, 6 and 7; shared continuous current rating is 280A at TC=25°C. |
| 3 | S | passive | Source, tied with pins 2, 5, 6 and 7; shared continuous current rating is 280A at TC=25°C. |
| 4 | D | passive | Drain; drain-source voltage rating is 60V with RDS(ON) of 2.1mΩ typ and 3.2mΩ max at VGS=10V, ID=20A. |
| 5 | S | passive | Source, tied with pins 2, 3, 6 and 7; shared continuous current rating is 280A at TC=25°C. |
| 6 | S | passive | Source, tied with pins 2, 3, 5 and 7; shared continuous current rating is 280A at TC=25°C. |
| 7 | S | passive | Source, listed as pin 7 in the pin configuration and tied with pins 2, 3, 5 and 6; shared continuous current rating is 280A at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-263-6L |
| Category | Transistors/Thyristors |
| Pins | 7 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | TC=25°C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25°C | 1 |
| Continuous Drain Current | ID@TC=25°C | | | 280 | A | TC=25°C | 1 |
| Continuous Drain Current | ID@TC=100°C | | | 248 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM | | | 240 | A | TC=25°C | 1 |
| Single Pulse Avalanche Energy | EAS | | | 101 | mJ | TC=25°C | 1 |
| Avalanche Current | IAS | | | 55 | A | TC=25°C | 1 |
| Total Power Dissipation | PD@TC=25°C | | | 168 | W | TC=25°C | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | °C | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 0.89 | °C/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 1.5 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V , ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 2.1 | 3.2 | mΩ | VGS=10V , ID=20A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 2.8 | 4 | V | VGS=VDS , ID=250μA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | μA | VDS=60V , VGS=0V , TJ=25°C | 2 |
| Drain-Source Leakage Current | IDSS | | | 100 | μA | VDS=60V , VGS=0V , TJ=100°C | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Continuous Source Current | IS | | | 125 | A | TC=25°C | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | IS=20A , VGS=0V | 2 |
| Forward Transconductance | gfs | | 78 | | S | VDS=5V , ID=20A | 2 |
| Gate Resistance | Rg | | 2.2 | | Ω | ƒ=1.0MHz | 2 |
| Total Gate Charge | Qg | | 72.5 | | nC | VDS=30V , VGS=10V , ID=20A | 2 |
| Gate-Source Charge | Qgs | | 19.5 | | nC | VDS=30V , VGS=10V , ID=20A | 2 |
| Gate-Drain Charge | Qgd | | 14 | | nC | VDS=30V , VGS=10V , ID=20A | 2 |
| Turn-on Delay Time | Td(on) | | 26.5 | | ns | VDD=30V , VGS=10V , RG=3Ω , ID=20A | 2 |
| Rise Time | Tr | | 15 | | ns | VDD=30V , VGS=10V , RG=3Ω , ID=20A | 2 |
| Turn-off Delay Time | Td(off) | | 73 | | ns | VDD=30V , VGS=10V , RG=3Ω , ID=20A | 2 |
| Fall Time | Tf | | 18 | | ns | VDD=30V , VGS=10V , RG=3Ω , ID=20A | 2 |
| Input Capacitance | Ciss | | 5245 | | pF | VDS=30V , VGS=0V , ƒ=1.0MHz | 2 |
| Output Capacitance | Coss | | 1090 | | pF | VDS=30V , VGS=0V , ƒ=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 25 | | pF | VDS=30V , VGS=0V , ƒ=1.0MHz | 2 |
| Reverse Recovery Time | trr | | 25 | | ns | IF=20A , di/dt=100A/µs | 2 |
| Reverse Recovery Charge | Qrr | | 90 | | nC | IF=20A , di/dt=100A/µs | 2 |
## CAD (KiCad official)
- Symbol: `WSK280N06G6`
- Footprint: `Package_TO_SOT_SMD:TO-263-6`
- 3D model: TO-263-6L (KiCad packages3D, STEP)
- 3D model files: `wsk280n06g6-etched.step` / `wsk280n06g6-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsk280n06g6.step` / `wsk280n06g6.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](docs/wsk280n06g6-datasheet.pdf) (6 pp, sha256 `8861cf7a2e349a27`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsk280n06g6-datasheet.pdf)