component
WSK280N06G6
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-263-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| README.md | 14d ago |
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| wsk280n06g6-etched.step | 14d ago |
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| wsk280n06g6.step | 14d ago |
WSK280N06G6
Winsok Semicon · MOSFETs · TO-263-6L
WSK280N06G6 from Winsok Semicon, in a TO-263-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20V with threshold VGS(th) of 2.0V min to 4.0V max at ID=250μA. |
| 2 | S | passive | Source, tied with pins 3, 5, 6 and 7; shared continuous current rating is 280A at TC=25°C. |
| 3 | S | passive | Source, tied with pins 2, 5, 6 and 7; shared continuous current rating is 280A at TC=25°C. |
| 4 | D | passive | Drain; drain-source voltage rating is 60V with RDS(ON) of 2.1mΩ typ and 3.2mΩ max at VGS=10V, ID=20A. |
| 5 | S | passive | Source, tied with pins 2, 3, 6 and 7; shared continuous current rating is 280A at TC=25°C. |
| 6 | S | passive | Source, tied with pins 2, 3, 5 and 7; shared continuous current rating is 280A at TC=25°C. |
| 7 | S | passive | Source, listed as pin 7 in the pin configuration and tied with pins 2, 3, 5 and 6; shared continuous current rating is 280A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-263-6L |
| Category | Transistors/Thyristors |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | TC=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25°C | 1 | |
| Continuous Drain Current | ID@TC=25°C | 280 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID@TC=100°C | 248 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 240 | A | TC=25°C | 1 | ||
| Single Pulse Avalanche Energy | EAS | 101 | mJ | TC=25°C | 1 | ||
| Avalanche Current | IAS | 55 | A | TC=25°C | 1 | ||
| Total Power Dissipation | PD@TC=25°C | 168 | W | TC=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 0.89 | °C/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 1.5 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V , ID=250μA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 2.1 | 3.2 | mΩ | VGS=10V , ID=20A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 2.8 | 4 | V | VGS=VDS , ID=250μA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=60V , VGS=0V , TJ=25°C | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | μA | VDS=60V , VGS=0V , TJ=100°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 125 | A | TC=25°C | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | IS=20A , VGS=0V | 2 | ||
| Forward Transconductance | gfs | 78 | S | VDS=5V , ID=20A | 2 | ||
| Gate Resistance | Rg | 2.2 | Ω | ƒ=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 72.5 | nC | VDS=30V , VGS=10V , ID=20A | 2 | ||
| Gate-Source Charge | Qgs | 19.5 | nC | VDS=30V , VGS=10V , ID=20A | 2 | ||
| Gate-Drain Charge | Qgd | 14 | nC | VDS=30V , VGS=10V , ID=20A | 2 | ||
| Turn-on Delay Time | Td(on) | 26.5 | ns | VDD=30V , VGS=10V , RG=3Ω , ID=20A | 2 | ||
| Rise Time | Tr | 15 | ns | VDD=30V , VGS=10V , RG=3Ω , ID=20A | 2 | ||
| Turn-off Delay Time | Td(off) | 73 | ns | VDD=30V , VGS=10V , RG=3Ω , ID=20A | 2 | ||
| Fall Time | Tf | 18 | ns | VDD=30V , VGS=10V , RG=3Ω , ID=20A | 2 | ||
| Input Capacitance | Ciss | 5245 | pF | VDS=30V , VGS=0V , ƒ=1.0MHz | 2 | ||
| Output Capacitance | Coss | 1090 | pF | VDS=30V , VGS=0V , ƒ=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 25 | pF | VDS=30V , VGS=0V , ƒ=1.0MHz | 2 | ||
| Reverse Recovery Time | trr | 25 | ns | IF=20A , di/dt=100A/µs | 2 | ||
| Reverse Recovery Charge | Qrr | 90 | nC | IF=20A , di/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
WSK280N06G6 - Footprint:
Package_TO_SOT_SMD:TO-263-6 - 3D model: TO-263-6L (KiCad packages3D, STEP)
- 3D model files:
wsk280n06g6-etched.step/wsk280n06g6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsk280n06g6.step/wsk280n06g6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (6 pp, sha256
8861cf7a2e349a27, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).