# WSK200N08A

**Winsok Semicon** · MOSFETs · TO-263

WSK200N08A from Winsok Semicon, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±25 V maximum and a threshold of 2.0 to 4.0 V at ID=250uA. |
| 2 | D | passive | Drain (also the exposed tab); VDS rated 80 V, continuous current 200 A at TC=25℃. |
| 3 | S | passive | Source; the body diode runs from source to drain, with continuous source current IS up to 200 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 80 |  |  | V | VGS=0V , ID=250uA | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ |  | 0.096 |  | V/℃ | Reference to 25℃ , ID=1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 4 | mΩ | VGS=10V,ID=100A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VGS=VDS , ID =250uA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) |  | -5.5 |  | mV/℃ |  | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=80V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | uA | VDS=80V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±25V , VDS=0V | 2 |
| Single Pulse Avalanche Energy | EAS | 160 |  |  | mJ | VDD=25V , L=0.5mH , IAS=28A | 2 |
| Continuous Source Current | IS |  |  | 200 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 350 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V , IS=15A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS |  |  | 80 | V |  | 1 |
| Gate-Source Voltage | VGS | -25 |  | 25 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 200 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 144 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 790 | A | TC=25°C | 1 |
| Avalanche Energy, Single pulse | EAS |  |  | 1496 | mJ | L=0.5mH | 1 |
| Avalanche Current, Single pulse | IAS |  |  | 200 | A | L=0.5mH | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 345 | W |  | 1 |
| Total Power Dissipation | PD@TC=100℃ |  |  | 173 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 175 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ |  |  | 175 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 62.5 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 0.43 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `WSK200N08A`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `wsk200n08a-etched.step` / `wsk200n08a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsk200n08a.step` / `wsk200n08a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916493819633664) (7 pp, sha256 `558b5b74ebbcb54f`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wsk200n08a-datasheet.pdf)