main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers wsk200n08a: viewers · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago
wsk200n08a-etched.glb Publish 0.1.0 · Ray 17d ago
wsk200n08a-etched.step wsk200n08a: factory component page (tier=lcsc) · Ray 17d ago
wsk200n08a-hero.glb wsk200n08a: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
wsk200n08a-hero.overlay.json Publish 0.1.0 · Ray 17d ago
wsk200n08a.glb Publish 0.1.0 · Ray 17d ago
wsk200n08a.kicad_mod Publish 0.1.0 · Ray 17d ago
wsk200n08a.kicad_sym Publish 0.1.0 · Ray 17d ago
wsk200n08a.lbr Publish 0.1.0 · Ray 17d ago
wsk200n08a.step Publish 0.1.0 · Ray 17d ago

WSK200N08A

Winsok Semicon · MOSFETs · TO-263

WSK200N08A from Winsok Semicon, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±25 V maximum and a threshold of 2.0 to 4.0 V at ID=250uA.
2 D passive Drain (also the exposed tab); VDS rated 80 V, continuous current 200 A at TC=25℃.
3 S passive Source; the body diode runs from source to drain, with continuous source current IS up to 200 A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V , ID=250uA 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.096 V/℃ Reference to 25℃ , ID=1mA 2
Static Drain-Source On-Resistance RDS(ON) 4 mΩ VGS=10V,ID=100A 2
Gate Threshold Voltage VGS(th) 2 3 4 V VGS=VDS , ID =250uA 2
VGS(th) Temperature Coefficient △VGS(th) -5.5 mV/℃ 2
Drain-Source Leakage Current IDSS 1 uA VDS=80V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 10 uA VDS=80V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±25V , VDS=0V 2
Single Pulse Avalanche Energy EAS 160 mJ VDD=25V , L=0.5mH , IAS=28A 2
Continuous Source Current IS 200 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 350 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=15A , TJ=25℃ 2
Drain-Source Voltage VDS 80 V 1
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current ID@TC=25℃ 200 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 144 A VGS @ 10V 1
Pulsed Drain Current IDM 790 A TC=25°C 1
Avalanche Energy, Single pulse EAS 1496 mJ L=0.5mH 1
Avalanche Current, Single pulse IAS 200 A L=0.5mH 1
Total Power Dissipation PD@TC=25℃ 345 W 1
Total Power Dissipation PD@TC=100℃ 173 W 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ 175 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62.5 ℃/W 1
Thermal Resistance Junction-Case RθJC 0.43 ℃/W 1

CAD (KiCad official)

  • Symbol: WSK200N08A
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: wsk200n08a-etched.step / wsk200n08a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsk200n08a.step / wsk200n08a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (7 pp, sha256 558b5b74ebbcb54f, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF