# WSF12N10G

**Winsok Semicon** · MOSFETs · TO-252

WSF12N10G from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold 1.2 V min to 2.5 V max at ID=250 µA. |
| 2 | D | passive | Drain (also the exposed tab); drain-source voltage rated 100 V, continuous drain current 12 A at TC=25 °C. |
| 3 | S | passive | Source; body diode forward current 7 A, pulsed source current 21 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 100 | 111 |  | V | VGS=0 V, ID=250 μA | 2 |
| Gate threshold voltage | VGS(th) | 1.2 | 2 | 2.5 | V | VDS=VGS, ID=250 μA | 2 |
| Drain-source on-state resistance | RDS(ON) |  | 105 | 125 | mΩ | VGS=10 V, ID=5 A | 2 |
| Drain-source on-state resistance | RDS(ON) |  | 115 | 145 | mΩ | VGS=4.5 V, ID=3 A | 2 |
| Drain-source leakage current | IDSS |  |  | 1 | uA | VDS=100 V, VGS=0 V | 2 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS=20 V | 2 |
| Gate-source leakage current | IGSS |  |  | -100 | nA | VGS=-20 V | 2 |
| Diode forward current | IS |  |  | 7 | A |  | 2 |
| Pulsed source current | ISP |  |  | 21 | A |  | 2 |
| Diode forward voltage | VSD |  |  | 1 | V | IS=7 A, VGS=0 V | 2 |
| Drain-source voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous drain current | ID |  |  | 12 | A | TC=25 ℃ | 1 |
| Pulsed drain current | ID, pulse |  |  | 24 | A | TC=25 ℃ | 1 |
| Power dissipation | PD |  |  | 16.9 | W | TC=25 ℃ | 1 |
| Single pulsed avalanche energy | EAS |  |  | 1.2 | mJ | Note5) | 1 |
| Operation and storage temperature | Tstg,Tj | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction-case | RθJC |  | 7.4 |  | ℃/W |  | 1 |
| Thermal resistance, junction-ambient | RθJA |  | 62 |  | ℃/W | Note4) | 1 |

## CAD (KiCad official)

- Symbol: `WSF12N10G`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `wsf12n10g-etched.step` / `wsf12n10g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsf12n10g.step` / `wsf12n10g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589837136280391680) (5 pp, sha256 `27af10fe9666f1e3`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wsf12n10g-datasheet.pdf)