component
WSF12N10G
Public Made by Adomby adom
Winsok Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWSF12N10G
Winsok Semicon · MOSFETs · TO-252
WSF12N10G from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold 1.2 V min to 2.5 V max at ID=250 µA. |
| 2 | D | passive | Drain (also the exposed tab); drain-source voltage rated 100 V, continuous drain current 12 A at TC=25 °C. |
| 3 | S | passive | Source; body diode forward current 7 A, pulsed source current 21 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 100 | 111 | V | VGS=0 V, ID=250 μA | 2 | |
| Gate threshold voltage | VGS(th) | 1.2 | 2 | 2.5 | V | VDS=VGS, ID=250 μA | 2 |
| Drain-source on-state resistance | RDS(ON) | 105 | 125 | mΩ | VGS=10 V, ID=5 A | 2 | |
| Drain-source on-state resistance | RDS(ON) | 115 | 145 | mΩ | VGS=4.5 V, ID=3 A | 2 | |
| Drain-source leakage current | IDSS | 1 | uA | VDS=100 V, VGS=0 V | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V | 2 | ||
| Gate-source leakage current | IGSS | -100 | nA | VGS=-20 V | 2 | ||
| Diode forward current | IS | 7 | A | 2 | |||
| Pulsed source current | ISP | 21 | A | 2 | |||
| Diode forward voltage | VSD | 1 | V | IS=7 A, VGS=0 V | 2 | ||
| Drain-source voltage | VDS | 100 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | 12 | A | TC=25 ℃ | 1 | ||
| Pulsed drain current | ID, pulse | 24 | A | TC=25 ℃ | 1 | ||
| Power dissipation | PD | 16.9 | W | TC=25 ℃ | 1 | ||
| Single pulsed avalanche energy | EAS | 1.2 | mJ | Note5) | 1 | ||
| Operation and storage temperature | Tstg,Tj | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-case | RθJC | 7.4 | ℃/W | 1 | |||
| Thermal resistance, junction-ambient | RθJA | 62 | ℃/W | Note4) | 1 |
CAD (KiCad official)
- Symbol:
WSF12N10G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wsf12n10g-etched.step/wsf12n10g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsf12n10g.step/wsf12n10g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
27af10fe9666f1e3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).