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WSD75N12GDN56
Public Made by Adomby adom
Winsok Semicon MOSFETs, DFN5X6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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WSD75N12GDN56
Winsok Semicon · MOSFETs · DFN5X6-8
WSD75N12GDN56 from Winsok Semicon, in a DFN5X6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, which carries the continuous drain current of up to 75 A at Tc=25℃. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, which carries the continuous drain current of up to 75 A at Tc=25℃. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, which carries the continuous drain current of up to 75 A at Tc=25℃. |
| 4 | G | input | Gate terminal with an absolute maximum gate-to-source voltage of ±20 V and a threshold of 2.5 to 3.5 V. |
| 5 | D | passive | Drain terminal rated for 120 V drain-to-source voltage, 75 A continuous current at Tc=25℃ and 320 A pulsed current. |
| 6 | D | passive | Drain terminal rated for 120 V drain-to-source voltage, 75 A continuous current at Tc=25℃ and 320 A pulsed current. |
| 7 | D | passive | Drain terminal rated for 120 V drain-to-source voltage, 75 A continuous current at Tc=25℃ and 320 A pulsed current. |
| 8 | D | passive | Drain terminal rated for 120 V drain-to-source voltage, 75 A continuous current at Tc=25℃ and 320 A pulsed current. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | DFN5X6-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | 120 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS = 120V, VGS= 0V | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS =+20V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS =-20V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2.5 | 3 | 3.5 | V | VDS=VGS, ID = 250µA | 2 |
| Drain-to-Source On-Resistance | RDS(ON)1 | 6 | 6.8 | mΩ | VGS=10V, ID=20A | 2 | |
| Forward Transconductance | gFS | 130 | S | VDS=5V, ID=50A | 2 | ||
| Diode Forward Current | IS | 100 | A | TC =25 °C | 2 | ||
| Diode Pulse Current | ISM | 320 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | IS=6.0A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDSS | 120 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 75 | A | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 70 | A | Tc=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 320 | A | 1 | |||
| Single pulse avalanche current | IAR | 40 | A | 1 | |||
| Single pulse avalanche energy | EAS | 240 | mJ | VDD=50V, L=0.3mH, Rg=25Ω, Starting TJ=25 ℃ | 1 | ||
| Power Dissipation | PD | 125 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 260 | ℃ | 1 | |||
| Thermal Resistance, Junction-to-Case | RθJC | 1 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |
CAD (KiCad official)
- Symbol:
WSD75N12GDN56 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8 (KiCad packages3D, STEP)
- 3D model files:
wsd75n12gdn56-etched.step/wsd75n12gdn56-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsd75n12gdn56.step/wsd75n12gdn56.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
3bd17b5b8bb15303, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# WSD75N12GDN56
**Winsok Semicon** · MOSFETs · DFN5X6-8
WSD75N12GDN56 from Winsok Semicon, in a DFN5X6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, which carries the continuous drain current of up to 75 A at Tc=25℃. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, which carries the continuous drain current of up to 75 A at Tc=25℃. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, which carries the continuous drain current of up to 75 A at Tc=25℃. |
| 4 | G | input | Gate terminal with an absolute maximum gate-to-source voltage of ±20 V and a threshold of 2.5 to 3.5 V. |
| 5 | D | passive | Drain terminal rated for 120 V drain-to-source voltage, 75 A continuous current at Tc=25℃ and 320 A pulsed current. |
| 6 | D | passive | Drain terminal rated for 120 V drain-to-source voltage, 75 A continuous current at Tc=25℃ and 320 A pulsed current. |
| 7 | D | passive | Drain terminal rated for 120 V drain-to-source voltage, 75 A continuous current at Tc=25℃ and 320 A pulsed current. |
| 8 | D | passive | Drain terminal rated for 120 V drain-to-source voltage, 75 A continuous current at Tc=25℃ and 320 A pulsed current. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | DFN5X6-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | 120 | | | V | VGS=0V, ID=250µA | 2 |
| Drain to Source Leakage Current | IDSS | | | 1 | µA | VDS = 120V, VGS= 0V | 2 |
| Gate to Source Forward Leakage | IGSS(F) | | | 100 | nA | VGS =+20V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) | | | -100 | nA | VGS =-20V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2.5 | 3 | 3.5 | V | VDS=VGS, ID = 250µA | 2 |
| Drain-to-Source On-Resistance | RDS(ON)1 | | 6 | 6.8 | mΩ | VGS=10V, ID=20A | 2 |
| Forward Transconductance | gFS | 130 | | | S | VDS=5V, ID=50A | 2 |
| Diode Forward Current | IS | | | 100 | A | TC =25 °C | 2 |
| Diode Pulse Current | ISM | | | 320 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | IS=6.0A, VGS=0V | 2 |
| Drain-Source Voltage | VDSS | | | 120 | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 75 | A | Tc=25℃ | 1 |
| Continuous Drain Current | ID | | | 70 | A | Tc=70℃ | 1 |
| Pulsed Drain Current | IDM | | | 320 | A | | 1 |
| Single pulse avalanche current | IAR | | | 40 | A | | 1 |
| Single pulse avalanche energy | EAS | | | 240 | mJ | VDD=50V, L=0.3mH, Rg=25Ω, Starting TJ=25 ℃ | 1 |
| Power Dissipation | PD | | | 125 | W | | 1 |
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 | | 150 | ℃ | | 1 |
| Maximum Temperature for Soldering | TL | | | 260 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 1 | ℃/W | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 50 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |
## CAD (KiCad official)
- Symbol: `WSD75N12GDN56`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8 (KiCad packages3D, STEP)
- 3D model files: `wsd75n12gdn56-etched.step` / `wsd75n12gdn56-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsd75n12gdn56.step` / `wsd75n12gdn56.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Winsok Semicon datasheet](docs/wsd75n12gdn56-datasheet.pdf) (5 pp, sha256 `3bd17b5b8bb15303`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/wsd75n12gdn56-datasheet.pdf)