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Contents

README

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WSD75N12GDN56

Winsok Semicon · MOSFETs · DFN5X6-8

WSD75N12GDN56 from Winsok Semicon, in a DFN5X6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, which carries the continuous drain current of up to 75 A at Tc=25℃.
2 S passive Source terminal of the N-channel MOSFET, which carries the continuous drain current of up to 75 A at Tc=25℃.
3 S passive Source terminal of the N-channel MOSFET, which carries the continuous drain current of up to 75 A at Tc=25℃.
4 G input Gate terminal with an absolute maximum gate-to-source voltage of ±20 V and a threshold of 2.5 to 3.5 V.
5 D passive Drain terminal rated for 120 V drain-to-source voltage, 75 A continuous current at Tc=25℃ and 320 A pulsed current.
6 D passive Drain terminal rated for 120 V drain-to-source voltage, 75 A continuous current at Tc=25℃ and 320 A pulsed current.
7 D passive Drain terminal rated for 120 V drain-to-source voltage, 75 A continuous current at Tc=25℃ and 320 A pulsed current.
8 D passive Drain terminal rated for 120 V drain-to-source voltage, 75 A continuous current at Tc=25℃ and 320 A pulsed current.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package DFN5X6-8
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Breakdown Voltage VDSS 120 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS = 120V, VGS= 0V 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS =+20V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS =-20V 2
Gate Threshold Voltage VGS(TH) 2.5 3 3.5 V VDS=VGS, ID = 250µA 2
Drain-to-Source On-Resistance RDS(ON)1 6 6.8 mΩ VGS=10V, ID=20A 2
Forward Transconductance gFS 130 S VDS=5V, ID=50A 2
Diode Forward Current IS 100 A TC =25 °C 2
Diode Pulse Current ISM 320 A 2
Diode Forward Voltage VSD 1.2 V IS=6.0A, VGS=0V 2
Drain-Source Voltage VDSS 120 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 75 A Tc=25℃ 1
Continuous Drain Current ID 70 A Tc=70℃ 1
Pulsed Drain Current IDM 320 A 1
Single pulse avalanche current IAR 40 A 1
Single pulse avalanche energy EAS 240 mJ VDD=50V, L=0.3mH, Rg=25Ω, Starting TJ=25 ℃ 1
Power Dissipation PD 125 W 1
Operating Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ 1
Maximum Temperature for Soldering TL 260 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 1 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 50 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper 1

CAD (KiCad official)

  • Symbol: WSD75N12GDN56
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8 (KiCad packages3D, STEP)
  • 3D model files: wsd75n12gdn56-etched.step / wsd75n12gdn56-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsd75n12gdn56.step / wsd75n12gdn56.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 3bd17b5b8bb15303, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF