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Ray wsd40l60dn56: specified limits as data (metadata.characteristics, 24 rows from the datasheet) 2170d7a 16d ago

WSD40L60DN56

Winsok Semicon · MOSFETs · DFN5x6-8

WSD40L60DN56 from Winsok Semicon, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; the drawing shows three S pins on the same side as G, and the part is rated for continuous drain current of -60A at TC=25C.
2 S passive Source of the P-channel MOSFET, tied with the other source pins; the datasheet gives VDS of -40V and a body-diode continuous source current IS of -50A.
3 S passive Source of the P-channel MOSFET, tied with the other source pins; pulsed drain current is rated at -150A.
4 G input Gate of the P-channel MOSFET with a gate-source voltage rating of ±20V and a threshold of -1.2V min to -2.5V max at ID=-250uA.
5 D passive Drain of the P-channel MOSFET, with a drain-source voltage rating of -40V and RDS(ON) of 10mΩ typ at VGS=-10V, ID=-15A.
6 D passive Drain of the P-channel MOSFET, tied with the other drain pins; continuous drain current is -60A at TC=25C and -35A at TC=100C.
7 D passive Drain of the P-channel MOSFET, tied with the other drain pins; pulsed drain current is rated at -150A.
8 D passive Drain of the P-channel MOSFET, tied with the other drain pins; RθJC is 2.5 C/W max.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ -60 A VGS @ -10V 1
Continuous Drain Current ID@TC=100℃ -35 A VGS @ -10V 1
Pulsed Drain Current IDM -150 A 1
Single Pulse Avalanche Energy EAS 150 mJ 1
Avalanche Current IAS -30 A 1
Total Power Dissipation PD@TC=25℃ 50 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62.5 ℃/W 1
Thermal Resistance Junction-Ambient (t ≤10s) RθJA 40 ℃/W t ≤10s 1
Thermal Resistance Junction-Case RθJC 2.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 10 14 mΩ VGS=-10V, ID=-15A 2
Static Drain-Source On-Resistance RDS(ON) 14 21 mΩ VGS=-4.5V, ID=-10A 2
Gate Threshold Voltage VGS(th) -1.2 -1.7 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-32V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-32V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Single Pulse Avalanche Energy EAS 100 mJ VDD=-20V, L=0.5mH, IAS=-24A 2
Continuous Source Current IS -50 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -150 A 2
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSD40L60DN56
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: wsd40l60dn56-etched.step / wsd40l60dn56-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsd40l60dn56.step / wsd40l60dn56.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (6 pp, sha256 5d4d2fd77488600d, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF