component
WSD40L60DN56
Public Made by Adomby adom
Winsok Semicon MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
wsd40l60dn56: specified limits as data (metadata.characteristics, 24 rows from the datasheet)
2 files changed
+327−1
README.md+31@@ -27,6 +27,37 @@ WSD40L60DN56 from Winsok Semicon, in a DFN5x6-8. Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | -40 | | | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID@TC=25℃ | -60 | | | A | VGS @ -10V | 1 |+| Continuous Drain Current | ID@TC=100℃ | -35 | | | A | VGS @ -10V | 1 |+| Pulsed Drain Current | IDM | -150 | | | A | | 1 |+| Single Pulse Avalanche Energy | EAS | | | 150 | mJ | | 1 |+| Avalanche Current | IAS | -30 | | | A | | 1 |+| Total Power Dissipation | PD@TC=25℃ | | | 50 | W | TC=25℃ | 1 |+| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |+| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance Junction-Ambient | RθJA | | | 62.5 | ℃/W | | 1 |+| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA | | | 40 | ℃/W | t ≤10s | 1 |+| Thermal Resistance Junction-Case | RθJC | | | 2.5 | ℃/W | | 1 |+| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V, ID=-250uA | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 10 | 14 | mΩ | VGS=-10V, ID=-15A | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 14 | 21 | mΩ | VGS=-4.5V, ID=-10A | 2 |+| Gate Threshold Voltage | VGS(th) | -1.2 | -1.7 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |+| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 2 |+| Drain-Source Leakage Current | IDSS | | | -5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 2 |+| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |+| Single Pulse Avalanche Energy | EAS | 100 | | | mJ | VDD=-20V, L=0.5mH, IAS=-24A | 2 |+| Continuous Source Current | IS | | | -50 | A | VG=VD=0V, Force Current | 2 |+| Pulsed Source Current | ISM | | | -150 | A | | 2 |+| Diode Forward Voltage | VSD | | | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |+ ## CAD (KiCad official) - Symbol: `WSD40L60DN56`
page.json+296−1@@ -185,6 +185,301 @@ "Package": "DFN5x6-8", "Category": "Transistors/Thyristors", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "5d4d2fd77488600d",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -40,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID@TC=25℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "VGS @ -10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID@TC=100℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -35,+ "typ": null,+ "max": null,+ "conditions": "VGS @ -10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -150,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation",+ "symbol": "PD@TC=25℃",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature Range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-Ambient (t ≤10s)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "t ≤10s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -40,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=-250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 10,+ "max": 14,+ "conditions": "VGS=-10V, ID=-15A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 14,+ "max": 21,+ "conditions": "VGS=-4.5V, ID=-10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1.2,+ "typ": -1.7,+ "max": -2.5,+ "conditions": "VGS=VDS, ID=-250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-32V, VGS=0V, TJ=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "VDS=-32V, VGS=0V, TJ=55℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "electrical",+ "unit": "mJ",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VDD=-20V, L=0.5mH, IAS=-24A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -50,+ "conditions": "VG=VD=0V, Force Current",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VGS=0V, IS=-1A, TJ=25℃",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -226,4 +521,4 @@ "visibility": { "public": true }-}+}