# WPMD2075-6

**WILLSEMI Will Semicon** · MOSFETs · SOT-23-6L

WPMD2075-6 from WILLSEMI Will Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of P-channel MOSFET 1; VGS rated ±12V maximum with threshold of -0.3V to -1.5V. |
| 2 | S2 | passive | Source of P-channel MOSFET 2; drain-source voltage rating is -20V. |
| 3 | G2 | input | Gate of P-channel MOSFET 2; VGS rated ±12V maximum with threshold of -0.3V to -1.5V. |
| 4 | D2 | passive | Drain of P-channel MOSFET 2; continuous drain current of -3.6A (10 s, TA=25°C) and VDS of -20V. |
| 5 | S1 | passive | Source of P-channel MOSFET 1; drain-source voltage rating is -20V. |
| 6 | D1 | passive | Drain of P-channel MOSFET 1; continuous drain current of -3.6A (10 s, TA=25°C) and VDS of -20V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS = 0 V, ID = -250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | uA | VDS = -20 V, VGS = 0V | 3 |
| Gate-to-source Leakage Current | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±12V | 3 |
| Gate Threshold Voltage | VGS(TH) | -0.3 | -0.7 | -1.5 | V | VGS = VDS, ID = -250uA | 3 |
| Drain-to-source On-resistance | RDS(on) |  | 60 | 75 | mΩ | VGS = -10V, ID = -5A | 3 |
| Drain-to-source On-resistance | RDS(on) |  | 70 | 95 | mΩ | VGS = -4.5V, ID = -4A | 3 |
| Drain-to-source On-resistance | RDS(on) |  | 100 | 150 | mΩ | VGS = -2.5V, ID = -2.5A | 3 |
| Body diode forward voltage | VSD |  | -0.84 | -1.2 | V | VGS = 0 V, IS = -0.9A | 3 |
| Drain-Source Voltage | VDS | -20 |  |  | V |  | 2 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 2 |
| Continuous Drain Current (a,d) | ID | -3.6 |  |  | A | TA=25°C, t ≤ 10 s | 2 |
| Continuous Drain Current (a,d) | ID | -3.3 |  |  | A | TA=25°C, steady state | 2 |
| Continuous Drain Current (a,d) | ID | -2.9 |  |  | A | TA=70°C, t ≤ 10 s | 2 |
| Continuous Drain Current (a,d) | ID | -2.6 |  |  | A | TA=70°C, steady state | 2 |
| Maximum Power Dissipation (a,d) | PD |  |  | 1.2 | W | TA=25°C, t ≤ 10 s | 2 |
| Maximum Power Dissipation (a,d) | PD |  |  | 1 | W | TA=25°C, steady state | 2 |
| Maximum Power Dissipation (a,d) | PD |  |  | 0.7 | W | TA=70°C, t ≤ 10 s | 2 |
| Maximum Power Dissipation (a,d) | PD |  |  | 0.6 | W | TA=70°C, steady state | 2 |
| Continuous Drain Current (b,d) | ID | -3.3 |  |  | A | TA=25°C, t ≤ 10 s | 2 |
| Continuous Drain Current (b,d) | ID | -3 |  |  | A | TA=25°C, steady state | 2 |
| Continuous Drain Current (b,d) | ID | -2.6 |  |  | A | TA=70°C, t ≤ 10 s | 2 |
| Continuous Drain Current (b,d) | ID | -2.4 |  |  | A | TA=70°C, steady state | 2 |
| Maximum Power Dissipation (b,d) | PD |  |  | 1 | W | TA=25°C, t ≤ 10 s | 2 |
| Maximum Power Dissipation (b,d) | PD |  |  | 0.8 | W | TA=25°C, steady state | 2 |
| Maximum Power Dissipation (b,d) | PD |  |  | 0.6 | W | TA=70°C, t ≤ 10 s | 2 |
| Maximum Power Dissipation (b,d) | PD |  |  | 0.5 | W | TA=70°C, steady state | 2 |
| Pulsed Drain Current (c) | IDM | -20 |  |  | A |  | 2 |
| Operating Junction Temperature | TJ |  |  | 150 | °C |  | 2 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 2 |
| Junction-to-Ambient Thermal Resistance (a) | RθJA |  | 90 | 108 | °C/W | t ≤ 10 s, surface mounted on FR4, 1 sq in pad, 1oz copper | 2 |
| Junction-to-Ambient Thermal Resistance (a) | RθJA |  | 110 | 130 | °C/W | Steady state, surface mounted on FR4, 1 sq in pad, 1oz copper | 2 |
| Junction-to-Ambient Thermal Resistance (b) | RθJA |  | 105 | 128 | °C/W | t ≤ 10 s, surface mounted on FR4, minimum pad, 1oz copper | 2 |
| Junction-to-Ambient Thermal Resistance (b) | RθJA |  | 133 | 158 | °C/W | Steady state, surface mounted on FR4, minimum pad, 1oz copper | 2 |
| Junction-to-Case Thermal Resistance | RθJC |  | 60 | 75 | °C/W | Steady state | 2 |

## CAD (KiCad official)

- Symbol: `WPMD2075-6`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `wpmd2075-6-etched.step` / `wpmd2075-6-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wpmd2075-6.step` / `wpmd2075-6.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WILLSEMI Will Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590208709365297152) (6 pp, sha256 `60fb2d112f8e3528`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wpmd2075-6-datasheet.pdf)