component
WPMD2075-6
Public Made by Adomby adom
WILLSEMI Will Semicon MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWPMD2075-6
WILLSEMI Will Semicon · MOSFETs · SOT-23-6L
WPMD2075-6 from WILLSEMI Will Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of P-channel MOSFET 1; VGS rated ±12V maximum with threshold of -0.3V to -1.5V. |
| 2 | S2 | passive | Source of P-channel MOSFET 2; drain-source voltage rating is -20V. |
| 3 | G2 | input | Gate of P-channel MOSFET 2; VGS rated ±12V maximum with threshold of -0.3V to -1.5V. |
| 4 | D2 | passive | Drain of P-channel MOSFET 2; continuous drain current of -3.6A (10 s, TA=25°C) and VDS of -20V. |
| 5 | S1 | passive | Source of P-channel MOSFET 1; drain-source voltage rating is -20V. |
| 6 | D1 | passive | Drain of P-channel MOSFET 1; continuous drain current of -3.6A (10 s, TA=25°C) and VDS of -20V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0 V, ID = -250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS = -20 V, VGS = 0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12V | 3 | |
| Gate Threshold Voltage | VGS(TH) | -0.3 | -0.7 | -1.5 | V | VGS = VDS, ID = -250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 60 | 75 | mΩ | VGS = -10V, ID = -5A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 70 | 95 | mΩ | VGS = -4.5V, ID = -4A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 100 | 150 | mΩ | VGS = -2.5V, ID = -2.5A | 3 | |
| Body diode forward voltage | VSD | -0.84 | -1.2 | V | VGS = 0 V, IS = -0.9A | 3 | |
| Drain-Source Voltage | VDS | -20 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Continuous Drain Current (a,d) | ID | -3.6 | A | TA=25°C, t ≤ 10 s | 2 | ||
| Continuous Drain Current (a,d) | ID | -3.3 | A | TA=25°C, steady state | 2 | ||
| Continuous Drain Current (a,d) | ID | -2.9 | A | TA=70°C, t ≤ 10 s | 2 | ||
| Continuous Drain Current (a,d) | ID | -2.6 | A | TA=70°C, steady state | 2 | ||
| Maximum Power Dissipation (a,d) | PD | 1.2 | W | TA=25°C, t ≤ 10 s | 2 | ||
| Maximum Power Dissipation (a,d) | PD | 1 | W | TA=25°C, steady state | 2 | ||
| Maximum Power Dissipation (a,d) | PD | 0.7 | W | TA=70°C, t ≤ 10 s | 2 | ||
| Maximum Power Dissipation (a,d) | PD | 0.6 | W | TA=70°C, steady state | 2 | ||
| Continuous Drain Current (b,d) | ID | -3.3 | A | TA=25°C, t ≤ 10 s | 2 | ||
| Continuous Drain Current (b,d) | ID | -3 | A | TA=25°C, steady state | 2 | ||
| Continuous Drain Current (b,d) | ID | -2.6 | A | TA=70°C, t ≤ 10 s | 2 | ||
| Continuous Drain Current (b,d) | ID | -2.4 | A | TA=70°C, steady state | 2 | ||
| Maximum Power Dissipation (b,d) | PD | 1 | W | TA=25°C, t ≤ 10 s | 2 | ||
| Maximum Power Dissipation (b,d) | PD | 0.8 | W | TA=25°C, steady state | 2 | ||
| Maximum Power Dissipation (b,d) | PD | 0.6 | W | TA=70°C, t ≤ 10 s | 2 | ||
| Maximum Power Dissipation (b,d) | PD | 0.5 | W | TA=70°C, steady state | 2 | ||
| Pulsed Drain Current (c) | IDM | -20 | A | 2 | |||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance (a) | RθJA | 90 | 108 | °C/W | t ≤ 10 s, surface mounted on FR4, 1 sq in pad, 1oz copper | 2 | |
| Junction-to-Ambient Thermal Resistance (a) | RθJA | 110 | 130 | °C/W | Steady state, surface mounted on FR4, 1 sq in pad, 1oz copper | 2 | |
| Junction-to-Ambient Thermal Resistance (b) | RθJA | 105 | 128 | °C/W | t ≤ 10 s, surface mounted on FR4, minimum pad, 1oz copper | 2 | |
| Junction-to-Ambient Thermal Resistance (b) | RθJA | 133 | 158 | °C/W | Steady state, surface mounted on FR4, minimum pad, 1oz copper | 2 | |
| Junction-to-Case Thermal Resistance | RθJC | 60 | 75 | °C/W | Steady state | 2 |
CAD (KiCad official)
- Symbol:
WPMD2075-6 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
wpmd2075-6-etched.step/wpmd2075-6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wpmd2075-6.step/wpmd2075-6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI Will Semicon datasheet (6 pp, sha256
60fb2d112f8e3528, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).